[18p-Z24-1~14] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[18p-Z24-3] Effects of sputter gas pressure on the formation of compressively strained SiGe thin film using sputter epitaxy method

〇Kento Ikeno¹, Yosuke Aoyagi², Nobumitsu Hirose³, Akifumi Kasamatsu³, Toshiaki Matsui³, Yoshiyuki Suda², Takahiro Tsukamoto¹ (1.Univ. Electro-Comm, 2.Tokyo Univ. of Agric. & Technol, 3.National Inst. of Information and Communications Technol)

Keywords:sputter epitaxy, SiGe