Top-gate monolayer MoS<sub>2 </sub>MOSFETs with ZrO<sub>2</sub> gate dielectrics formed by low temperature ALD

Presentation information

Oral presentation

17 Nanocarbon Technology » 17.3 Layered materials

Fri. Mar 19, 2021 9:00 AM - 12:00 PM Z31 (Z31)

9:15 AM - 9:30 AM

〇WENHSIN CHANG¹, Naoya Okada¹, Masayo Horikawa¹, Takahiko Endo², Yasumitsu Miyata², Toshifumi Irisawa¹ (1.AIST, 2.TMU)

Keywords:MoS2, ZrO2, MOSFET