2:00 PM - 2:15 PM
△ [19p-Z33-3] Fabrication of bilayer oxide thin-film-transistors by a solution process and dependence of sintering atmosphere and film thickness of AZO buffer layers
Keywords:solution process, ZnO, bilayer TFT
In recent years, there has been a research report on a thin film transistor (TFT) in which different oxide semiconductors are laminated, and it is expected that the carrier mobility and the driving ability and stability of the TFT will be improved by adopting a laminated structure. We succeeded in improving the characteristics by bilayer structure of a ZnO or AZO channel layer and an AZO buffer layer with high Al incorporation. This time, we evaluated the effect of the sintering atmosphere and film thickness of the high-resistance AZO buffer layer on the TFT and report the results.