Oral presentation

13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

[23p-B204-1~9] 13.7 Compound and power devices, process technology and characterization

Fri. Sep 23, 2022 1:30 PM - 3:45 PM B204 (B204)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

△ [23p-B204-1] Transient temperature responce of GaN HEMT

〇Shunsuke Ito¹, Yutaka Taniguchi¹, Atsushi Tanaka², Tadatomo Suga³, Akio Wakejima¹ (1.Meikou Univ., 2.Nagoya Univ., 3.Meisei Univ.)

1:45 PM - 2:00 PM

[23p-B204-2] Electrical characteristics of Ge-doped GaN films deposited by low-temperature sputtering on N-polar surfaces

〇Shinji Yamada¹, Masanori Shirai², Hiroki Kobayashi², Ryuichiro Kamimura², Manabu Arai¹, Tetsu Kachi¹, Jun Suda¹ (1.Nagoya Univ., 2.ULVAC)

2:00 PM - 2:15 PM

[23p-B204-3] Investigation of Multi-Photon Excitation PEC Etching for n-type GaN with Different Carrier Concentrations

〇Nonoka Niwa¹, Seiya Kawasaki¹, Takeru Kumabe¹, Hirotaka Watanabe², Yuta Furusawa², Atsushi Tanaka², Manato Deki³, Maki Kushimoto¹, Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4 (1.Dept. of Electronics, Nagoya Univ., 2.IMaSS Nagoya Univ., 3.VBL Nagoya Univ., 4.ARC Nagoya Univ.)

2:15 PM - 2:30 PM

△ [23p-B204-4] Tight-Binding Analysis of the Effect of Strain on the Band Structure of GaN

〇Wataru Miyazaki¹, Hajime Tanaka¹, Nobuya Mori¹ (1.Osaka Univ.)

2:30 PM - 2:45 PM

△ [23p-B204-5] Si concentration dependence of electron traps introduced by electron beam irradiations to homoepitaxial n-type GaN

〇Meguru Endo¹, Masahiro Horita^1,2, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)

2:45 PM - 3:00 PM

△ [23p-B204-6] Correlation between non-ionizing energy loss and production rates of electron traps formed by various energetic particles in gallium nitride

〇Keito Aoshima¹, Masahiro Horita^1,2, Jun Suda^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

3:00 PM - 3:15 PM

[23p-B204-7] Annealing temperature dependence of depth distribution of trap density in ultra-low concentration Si-ion implanted GaN

〇Hiroko Iguchi¹, Masahiro Horita^1,2, Jun Suda^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

3:15 PM - 3:30 PM

[23p-B204-8] Characterization of deep level traps in n-type AlN using capacitance transient measurements

〇Masanobu Hiroki¹, Yoshinori Sato¹, Yoshitaka Taniyasu¹, Kazuhide Kumakura¹ (1.NTT BRL)

3:30 PM - 3:45 PM

[23p-B204-9] Room-temperature PL lifetime of state-of-the-art n-type GaN substrates and epilayers

〇Shigefusa Chichibu¹, Kohei Shima¹, Kazunobu Kojima¹, Akira Uedono², Shoji Ishibashi³, Hirotaka Watanabe⁴, Atsushi Tanaka⁴, Yoshio Honda⁴, Masayuki Imanishi⁵, Yusuke Mori⁵, Toshihide Nabatame⁶, Yoshihiro Irokawa⁶, Hiroshi Amano⁴, Yasuo Koide⁶ (1.IMRAM-Tohoku Univ., 2.Univ. of Tsukuba, 3.AIST, 4.Nagoya Univ., 5.Osaka Univ., 6.NIMS)

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