[20p-A406-1~13] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[20p-A406-12] Comparison of Fully-Depleted(FD) and Partially-Depleted(PD) Operation of SOI CMOS of Minimal Fab

〇Takeshi Hamamoto¹, Shingo Ura³, Masahiro Matsuda³, Yuji Kitayama⁴, Satoshi Maruyama⁴, Sommawan Khumpuang², Yasunari Shiba⁴, Tadaaki Tsuchiya³, Shiro Hara² (1.MINIMAL, 2.AIST, 3.Logic Research, 4.Yokogawa Solution Service)

Keywords:SOI

Minimal fab is a production system targeting high-mix low-volume production. In this minimal fab, MEMS devices such as cantilever, CMOS and operational amplifiers has been fabricated. In the next step, we are at the stage of creating PDKs and focusing on improving the operating accuracy of MOSFETs and enlargining process robustness. There are two types of operation modes for SOI CMOS: fully depleted operation and partially depleted operation. In this time, we compared the NMOS characteristics of these two operation modes and clarified the advantages of each operation.