[20p-P04-1~21] 13.7 Compound and power devices, process technology and characterization

[20p-P04-2] P/N MOSFETs operations in Single Vanadium-doped 4H-SiC Semi-Insulating Layer for Well-less CMOS Circuits

〇Toya Kai¹, Kazutoshi Kojima², Takeshi Ohshima³, Yasunori Tanaka², Shin-Ichiro Kuroki¹ (1.RIND, Hiroshima Univ., 2.AIST, 3.QST)

Keywords:4H-SiC, CMOS, semi-insulator

4H-SiC CMOS circuits are devices that are expected to operate for long periods of time in high temperature, high radiation resistant environments such as space and nuclear fields. If the active layer of the device is composed of an insulating layer, it would be an ideal structure with excellent radiation resistance. In this study, 4H-SiC n/p MOSFETs were fabricated on vanadium-doped 4H-SiC semi-insulating substrates and their characteristics were investigated.