[20p-P04-1~21] 13.7 化合物及びパワーデバイス・プロセス技術・評価

▲ [20p-P04-5] Design of Depletion Mode Ga₂O₃ MOSFET for e-vehicles and other power device applications

〇(PC)SYED SADIQUE ANWER ASKARI¹、GUFRAN AHMAD² (1.Dept. of Electronics Engineering, IIT (ISM) Dhanbad、2.Dept. of Electrical Engineering, Daalbagh Educational Institute (Deemed University), Agra)

キーワード：Ga2O3 MOSFET, POWER MOSFET

In this work, a wide bandgap Ga2O3-based MOSFET has been studied for power device applications. Comparison research was carried out on Gallium Oxide (Ga₂O₃) material, as well as Gallium Nitride (GaN) and Silicon Carbide (SiC-4H), to examine how effective Gallium Oxide material is for power device applications. The numerical simulations have been performed using SILVACO TCAD to optimize the device structure and get the insight of the power device applications.