[20p-P04-1~21] 13.7 Compound and power devices, process technology and characterization

[20p-P04-6] Evaluation of nonvolatile memory characteristics of GaN/AlN resonant tunneling diodes fabricated on Si (111) substrate

〇Masanori Nagase¹, Tokio Takahashi¹, Mitsuaki Shimizu¹ (1.AIST)

Keywords:nitride semiconductor, quantum well, nonvolatile memory

Improvement of nonvolatile memory characteristics is important for the realization of IoT society and Society 5.0. We are studying a high-speed nonvolatile memory using the intersubband transitions in GaN-based resonant tunneling diodes (GaN-based RTDs). In this presentation, nonvolatile memory characteristics of the GaN-based RTD fabricated on Si (111) substrate are evaluated toward the realization of integration of this memory with Si and related devices.