[21a-C200-1~11] 15.4 III-V-group nitride crystals

[21a-C200-5] Thickness control of InGaN thin films and fabrication of heterostructures via THVPE

〇Iori Kobayashi¹, Kentaro Ema¹, Chiho Yamada¹, Tomohiro Yamaguchi², Hisashi Murakami¹ (1.Tokyo Univ. of Agri. and Tech., 2.Kogakuin Univ.)

Keywords:nitride semiconductor, crystal growth, epitaxial growth

We have proposed InGaN crystal growth using THVPE method, which uses high-purity metal trichlorides and has excellent composition controllability at high temperature. In this study, we fabricated InGaN/ GaN multi-layered heterostructures via THVPE in order to investigate the controllability of thin films, as well as examining the capability of fabricating long-wavelength optoelectrical devices.