[21a-C200-1~11] 15.4 III-V-group nitride crystals

[21a-C200-4] Preparation of thick Mg-doped p-type GaN layers grown by halide vapor phase epitaxy

〇Kazuki Ohnishi¹, Naoki Fujimoto¹, Shugo Nitta¹, Hirotaka Watanabe¹, Yoshio Honda¹, Hiroshi Amano^1,2,3 (1.IMaSS, Nagoya Univ., 2.ARC, Nagoya Univ., 3.VBL, Nagoya Univ.)

Keywords:HVPE, p-type GaN