The 83rd JSAP Autumn Meeting 2022

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

[21a-M206-1~13] 13.7 Compound and power devices, process technology and characterization

Wed. Sep 21, 2022 9:00 AM - 12:30 PM M206 (Multimedia Research Hall)

Koji Kita(Univ. of Tokyo)

12:00 PM - 12:15 PM

[21a-M206-12] Development of Etching Process for Fabrication of Ga2O3 MOSFETs with Self-Aligned Recessed Gate

Takafumi Kamimura1, Masataka Higashiwaki1,2 (1.NICT, 2.Osaka Metropolitan Univ)

Keywords:Ga2O3, RF FET

We have demonstrated excellent high-frequency small-signal characteristics in Ga2O3 MOSFETs with a current-gain cutoff frequency of 9 GHz and a maximum oscillation frequency of 27 GHz so far. Minimizing access resistance is one of the effective ways to further improve RF characteristics. In this study, we developed an etching process for fabricating highly scaled Ga2O3 MOSFETs with self-aligned recessed gates, which are expected to significantly reduce access resistance.