The 83rd JSAP Autumn Meeting 2022

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

[21a-M206-1~13] 13.7 Compound and power devices, process technology and characterization

Wed. Sep 21, 2022 9:00 AM - 12:30 PM M206 (Multimedia Research Hall)

Koji Kita(Univ. of Tokyo)

12:15 PM - 12:30 PM

[21a-M206-13] 3659 V 0.37 A/mm NO2 doped diamond MOSFETs fabricated on misoriented diamond

Niloy Chandra Saha1, Seong-Woo Kim2, Koji Koyama2, Toshiyuki Oishi1, 〇Makoto Kasu1 (1.Saga Univ., 2.Adamant Namiki Precision Jewel Co., Ltd.)

Keywords:diamond

NO2-doped p-channel diamond MOSFETs were fabricated on a high-quality misoriented diamond substrate, and they exhibited the highest breakdown voltages of 3659 V among diamond.