[21a-M206-1~13] 13.7 Compound and power devices, process technology and characterization

[21a-M206-12] Development of Etching Process for Fabrication of Ga₂O₃ MOSFETs with Self-Aligned Recessed Gate

〇Takafumi Kamimura¹, Masataka Higashiwaki^1,2 (1.NICT, 2.Osaka Metropolitan Univ)

Keywords:Ga2O3, RF FET

We have demonstrated excellent high-frequency small-signal characteristics in Ga₂O₃ MOSFETs with a current-gain cutoff frequency of 9 GHz and a maximum oscillation frequency of 27 GHz so far. Minimizing access resistance is one of the effective ways to further improve RF characteristics. In this study, we developed an etching process for fabricating highly scaled Ga₂O₃ MOSFETs with self-aligned recessed gates, which are expected to significantly reduce access resistance.