[21a-M206-1~13] 13.7 Compound and power devices, process technology and characterization

[21a-M206-13] 3659 V 0.37 A/mm NO₂ doped diamond MOSFETs fabricated on misoriented diamond

Niloy Chandra Saha¹, Seong-Woo Kim², Koji Koyama², Toshiyuki Oishi¹, 〇Makoto Kasu¹ (1.Saga Univ., 2.Adamant Namiki Precision Jewel Co., Ltd.)

Keywords:diamond

NO2-doped p-channel diamond MOSFETs were fabricated on a high-quality misoriented diamond substrate, and they exhibited the highest breakdown voltages of 3659 V among diamond.