Deep levels formed near the SiO<sub>2</sub>/SiC interface by thermal oxidation of SiC

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

Wed. Sep 21, 2022 9:00 AM - 12:30 PM M206 (Multimedia Research Hall)

Koji Kita(Univ. of Tokyo)

9:15 AM - 9:30 AM

〇Haruki Fujii¹, Kazutaka Kanegae¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

Keywords:SiC, DLTS