The 83rd JSAP Autumn Meeting 2022

Presentation information

Oral presentation

3 Optics and Photonics » 3.14 Silicon photonics and integrated photonics (formerly 3.15)

[21p-A205-1~21] 3.14 Silicon photonics and integrated photonics (formerly 3.15)

Wed. Sep 21, 2022 1:00 PM - 6:45 PM A205 (A205)

Makoto Okano(AIST), Shota Kita(NTT), Hirohito Yamada(Tohoku Univ)

5:30 PM - 5:45 PM

[21p-A205-17] Investigation of Deposition Conditions for SiON with Refractive Index Degrees of Freedom for Waveguide

〇(M2)Keita Yamaguchi1, Eissa Moataz1, Yoshitaka Oiso1, Tomohiro Amemiya1,2, Nobuhiko Nishiyama1,2,3 (1.Tokyo Tech, 2.Tokyo Tech IIR, 3.PETRA)

Keywords:Waveguide, SiON, deposition

Si and SiN are generally used for waveguides in Si optical integrated circuits. However, the use of SiON, which has a refractive index range between SiO2 (1.45) and SiN (~2.0), can increase the degree of freedom in circuit design. In the actual fabrication, the previous studies have examined only a limited range of SiON refractive indices. In this paper, we report on our study of the deposition conditions that allow the refractive index to be changed over a wide range.