[21p-A205-1~21] 3.14 Silicon photonics and integrated photonics (formerly 3.15)

△ [21p-A205-17] Investigation of Deposition Conditions for SiON with Refractive Index Degrees of Freedom for Waveguide

〇(M2)Keita Yamaguchi¹, Eissa Moataz¹, Yoshitaka Oiso¹, Tomohiro Amemiya^1,2, Nobuhiko Nishiyama^1,2,3 (1.Tokyo Tech, 2.Tokyo Tech IIR, 3.PETRA)

Keywords:Waveguide, SiON, deposition

Si and SiN are generally used for waveguides in Si optical integrated circuits. However, the use of SiON, which has a refractive index range between SiO2 (1.45) and SiN (~2.0), can increase the degree of freedom in circuit design. In the actual fabrication, the previous studies have examined only a limited range of SiON refractive indices. In this paper, we report on our study of the deposition conditions that allow the refractive index to be changed over a wide range.