2022年第83回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

21 合同セッションK「ワイドギャップ酸化物半導体材料・デバイス」 » 21.1 合同セッションK 「ワイドギャップ酸化物半導体材料・デバイス」

[21p-B203-1~20] 21.1 合同セッションK 「ワイドギャップ酸化物半導体材料・デバイス」

2022年9月21日(水) 13:15 〜 18:45 B203 (B203)

宇野 和行(和歌山大)、清水 耕作(日大)

17:45 〜 18:00

[21p-B203-17] Fabrication of conductive anatase Ti1−xNbxO2 thin films by mist chemical vapor deposition

〇(D)Han XU1、Tomohito Sudare1、Yumie Miura1、Ryo Nakayama1、Ryota Shimizu1、Naoomi Yamada2、Kentaro Kaneko3、Taro Hitosugi1,4 (1.Tokyo Tech.、2.Chubu Univ.、3.Kyoto Univ、4.Univ. Tokyo)

キーワード:mist chemical vapor deposition, conductive Nb:TiO2

Niobium-doped anatase titanium dioxide (Ti1−xNbxO2: TNO) thin films have gained much attention as a transparent conducting oxide. The deposition of TNO thin films have been mainly studied in vacuum physical vapor deposition. Herein, we alternatively applied mist chemical vapor deposition (mist-CVD) to the TNO thin films deposition, which is a high-throughput, scalable, cost-effective, and environmentally-friendly process. Although the fabrication of TNO thin films by mist-CVD have been reported, it is limited to highly toxic solvent toluene. In this study, we demonstrate that less toxic ethanol is effective on the fabrication of conductive TNO thin films.