[22p-A307-1~17] CS.7 Code-sharing Session of 6.1 & 13.3 & 13.5

[22p-A307-7] Influence of sputtering pressure on AlScN films

〇(B)Yukimura Tokita¹, Sung-Lin Tsai¹, Takuya Hoshii¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui², Kuniyuki Kakushima¹ (1.Tokyo Tech Eng., 2.Tokyo Tech IIR)

Keywords:AlScN, leakage current, orientation

Wurtzite Al_1-xSc_xN (0<x≤0.43), in which Sc is introduced into AlN crystal, has been reported to exhibit ferroelectricity and is expected to be used as ferroelectric memory. There are reports that films can be deposited oriented along the c axis, but this varies depending on sputtering conditions. Since there are few examples of detailed studies on the effect of orientation on electrical properties, in this report, we fabricated capacitors using two AlScN films deposited under two conditions of sputtering pressure, 1.2 Pa and 0.7 Pa, and measured leakage current and breakdown voltage.