[22p-B204-1~18] 13.7 Compound and power devices, process technology and characterization

[22p-B204-16] Normally-off β-Ga₂O₃ vertical multi-fin FET with a drain current over 2.4 A

〇Daiki Wakimoto¹, Chia-Hung Lin¹, Quang Tu Thieu¹, Hironobu Miyamoto¹, Kohei Sasaki¹, Akito Kuramata¹ (1.NCT)

Keywords:beta-Gallium Oxide, vertical MOS transistor, HfO2 gate-insulator

β-Ga₂O₃ vertical multi-fin FETs were fabricated on a 12-μm thick unintentionally-doped-Ga₂O₃ epitaxial layer (1 x 10¹⁶ cm^-3) grown by HVPE on a conductive (> 2 x 10¹⁸ cm^-3) Ga₂O₃ substrate. The device with an active area of 35 µm x 60 µm operates in enhancement mode with an on-resistance of 15.8 mΩcm², an output current of 97 A/cm², and a breakdown voltage of 1580 V. Furthermore, the device with an active area of 2 mm square shows drain currents to reach 2.4 A.