[23a-B101-1~10] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[23a-B101-3] Analysis of Contribution of Active Species to Synthesis Mechanism of Hydrogenated Amorphous Carbon Films Using Machine Learning

〇Hiroki Kondo¹, Jumpei Kurokawa², Takayoshi Tsutsumi¹, Makoto Sekine¹, Kenji Ishikawa¹, Masaru Hori¹ (1.Nagoya Univ. Low-temp. Plasma, 2.Nagoya Univ. Eng.)

Keywords:Plasma-enhanced chemical vapor deposition, Machine learning, Hydrogenated amorphous carbon

In the deposition of hydrogenated amorphous carbon (a-C:H) films by a plasma-enhanced chemical vapor deposition, the contribution of various radicals to the etching resistance of a-C:H to oxygen plasma was quantitatively analyzed by machine learning with random forest and contribution analysis using SHAP values. The results suggest that the deposition of radicals with low hydrogen ratios and multiple bonds and the effect of hydrogen abstraction in the film increase the film density and decrease the etching rate.