Oral presentation

[22p-A406-1~15] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Thu. Sep 22, 2022 1:00 PM - 5:00 PM A406 (A406)

Toru Harigai(Toyohashi Univ. of Tech.), Takayoshi Tsutsumi(名大)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[22p-A406-1] Plasma-induced electronic defects ~ effects of Ar plasma on H-terminated Si surface~

〇Shota Nunomura¹, Isao Sakata¹, Kazunori Koga², Masaharu Shiratani² (1.AIST, 2.Kyushu Univ.)

1:15 PM - 1:30 PM

△ [22p-A406-2] Effects of Plasma-damaged Surface Structure on Mechanical Property Change in Silicon Nitride Films

〇Takahiro Goya¹, Keiichiro Urabe¹, Koji Eriguchi¹ (1.Kyoto Univ.)

1:30 PM - 1:45 PM

△ [22p-A406-3] 【Highlighted Presentation】Surface Reaction Mechanisms to Realize High-throughput SiN ALE

〇Akiko Hirata¹, Masanaga Fukasawa¹, J. U. Tercero², Katsuhisa Kugimiya¹, Yoshiya Hagimoto¹, Kazuhiro Karahashi², Satoshi Hamaguchi², Hayato Iwamoto¹ (1.Sony Semiconductor Solutions Corp., 2.Osaka Univ.)

1:45 PM - 2:00 PM

[22p-A406-4] Self-limiting cyclic etching of SiGe by using plasma-assisted thermal-cyclic method

〇Kazunori Shinoda¹, Katsuya Miura¹, Kenji Maeda², Masaru Izawa², Thi-Thuy-Nga Nguyen³, Kenji Ishikawa³, Masaru Hori³ (1.Hitachi R&D, 2.Hitachi High-Tech, 3.Nagoya Univ.)

2:00 PM - 2:15 PM

[22p-A406-5] Etching characteristics of GaN in Fluorocarbon plasmas

〇Kosei Kubota¹, Kazuo Takahashi¹ (1.KIT)

2:15 PM - 2:30 PM

[22p-A406-6] Ultra-fast Etching of Photo resist by Reactive Atmospheric-pressure Thermal Plasma Jet

〇(M2)Hibiki Kato¹, Hiroaki Hanafusa¹, Takuma Sato¹, Seiichirou Higashi¹ (1.Graduate School of Advanced Science and Engineering, Hiroshima Univ.)

2:30 PM - 2:45 PM

[22p-A406-7] Influence of pulse operation on ionic composition in a dual-frequency capacitively-coupled Ar/C₄F₈/O₂ plasma

〇Yuto Seki¹, Haruhito Kato¹, Shuichi Kuboi¹, Haruka Suzuki^1,2, Hirotaka Toyoda^1,2,3 (1.Nagoya Univ., 2.cLPS, Nagoya Univ., 3.NIFS)

2:45 PM - 3:00 PM

[22p-A406-8] [Young Scientist Presentation Award Speech] Imaging measurement of angular distribution of high-speed particles from a dual-frequency capacitively-coupled plasma incident on an RF electrode

〇Keita Ichikawa¹, Haruka Suzuki¹, Daiki Iino², Hiroyuki Hukumizu², Kazuaki Kurihara², Hirotaka Toyoda^1,3 (1.Nagoya Univ., 2.Kioxia Corp., 3.NIFS)

3:15 PM - 3:30 PM

[22p-A406-9] Low-temperature Formation of High-Performance IGZO Thin Film Transistors using Reactive Plasma Processes

〇Kosuke Takenaka¹, Yuji Hayashi¹, Susumu Toko¹, Akinori Ebe², Yuichi Setsuhara¹ (1.Osaka Univ., 2.EMD Corp.)

3:30 PM - 3:45 PM

[22p-A406-10] Room-temperature Growth of HfO₂/SiO₂ film by Neutral Beam Enhanced Atomic Layer Deposition with Electrical Characteristics

〇Daisuke Ohori¹, Yi-Ho Chen², Takuya Ozaki¹, Kazuhiko Endo³, Yiming Li², Seiji Samukawa^2,1,4 (1.IFS, Tohoku Univ., 2.NYCU, 3.AIST, 4.AIMR, Tohoku Univ.)

3:45 PM - 4:00 PM

△ [22p-A406-11] Investigation of Bonding State of Fluorocarbon Films and Its Properties

〇Toru Takeya¹, Okada Takeru¹ (1.Grad. Sch. Eng. Tohoku Univ.)

4:00 PM - 4:15 PM

△ [22p-A406-12] Effect of Amplitude Modulated Discharge Method on TEOS Plasma CVD

〇Akihiro Yamamoto¹, Iori Nagao¹, Yuma Yamamoto¹, Michihiro Otaka¹, Daisuke Yamashita¹, Kunihiro Kamataki¹, Takamasa Okumura¹, Naoto Yamashita¹, Naho Itagaki¹, Kazunori Koga^1,2, Masaharu Shiratani¹ (1.Kyushu Univ., 2.NINS.)

4:15 PM - 4:30 PM

△ [22p-A406-13] Deposition of rutile titanium oxide thin film using high power pulsed magnetron sputtering

〇(M1C)Miyuki Nishimura¹, Takayuki Ohta¹ (1.Meijo Univ.)

4:30 PM - 4:45 PM

[22p-A406-14] Crystallinity control of LiTiO film by plasma sputtering and its application to the negative electrode of Li-ion batteries

〇Misao Kiga¹, Yamada Teruya¹, Hanai Ryo¹, Masumoto Kodai¹, Uchida Giichiro^1,2 (1.Meijo Univ., 2.Ene.Inst Meijo Univ.)

4:45 PM - 5:00 PM

[22p-A406-15] Preparation of the gradient element functional thin films of Fe, Ti by sputtering deposition method using powder mixture targets

〇Hiroharu Kawasaki¹, Tamiko Ohshima¹, Yoshihito Yagyu¹, Takeshi Ihara¹, Yusuke Hibino¹, Takeshi Satake^1,2, Shin-ichi Aoqui² (1.Nai'l Ins. Tech. Sasebo Col., 2.Sojo Univ.)

Oral presentation

[23a-B101-1~10] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Fri. Sep 23, 2022 9:00 AM - 11:45 AM B101 (B101)

Kosuke Takenaka(Osaka Univ.), Giichiro Uchida(Meijo Univ)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[23a-B101-1] Relation between flip-flop characteristics of PTFE sputtered film and OH group

〇Kohshi Taguchi¹, Mina Tomikawa¹, Ko Minoura¹, Motohiro Yamahara¹, Kazuyuki Noborio¹ (1.SAKIGAKE-Semiconductor Co., Ltd.)

9:15 AM - 9:30 AM

[23a-B101-2] Plasma polymers are affected by chemical structure of monohydric alcohols.

〇Kohshi Taguchi¹, Kashiwagi Daiki¹, Yamahara Motohiro¹, Noborio Kazuyuki¹ (1.SAKIGAKE-Semiconductor Co., Ltd.)

9:30 AM - 9:45 AM

[23a-B101-3] Analysis of Contribution of Active Species to Synthesis Mechanism of Hydrogenated Amorphous Carbon Films Using Machine Learning

〇Hiroki Kondo¹, Jumpei Kurokawa², Takayoshi Tsutsumi¹, Makoto Sekine¹, Kenji Ishikawa¹, Masaru Hori¹ (1.Nagoya Univ. Low-temp. Plasma, 2.Nagoya Univ. Eng.)

9:45 AM - 10:00 AM

△ [23a-B101-4] Maximization of Nitrogen Radical Flux for High Through-Put Deposition of Boron Nitride Films with Controlled Bonding States

〇Yuya Asamoto^1,5, Takashi Hamano^1,5, Takayuki Matsuda¹, Masao Noma², Shigehiko Hasegawa³, Michiru Yamashita⁴, Keiichiro Urabe¹, Koji Eriguchi¹ (1.Kyoto Univ., 2.Shinko Seiki Co., Ltd., 3.Osaka Univ., 4.Hyogo Pref. Inst. Technol., 5.JSPS Research Fellow)

10:00 AM - 10:15 AM

△ [23a-B101-5] TiN Film Formed by DC-Filtered Arc Deposition with Anode Acting as Droplet Filter

〇jumpei kito¹, yuki hashimoto¹, yoshinori saiki¹, takahiro bando¹, toru harigai¹, hirohumi takikawa¹, hiroki gima² (1.Toyohashi Univ. Technol., 2.OSG Coating Service)

10:30 AM - 10:45 AM

△ [23a-B101-6] Development and basic performance evaluation of dielectric barrier discharge device using transparent electrode to realize simultaneous UV/NIR and plasma treatment

〇ZHIZHI LIU¹, Motoaki Yamauchi¹, Mao Xu¹, Taiki Osawa¹, Akitoshi Okino¹ (1.FIRST, Tokyo Tech.)

10:45 AM - 11:00 AM

△ [23a-B101-7] Effects of Atmospheric Pressure Low Temperature O₂ Plasma-Assisted Annealing
on Pt-Doped Rutile Phase TiO₂ Nanoparticles

〇(M1)Yuta Makino¹, Retsuo Kawakami¹, Shin-ichiro Yanagiya^1,2, Masahito Niibe³, Yoshitaka Nakano⁴, Takashi Mukai⁵ (1.Tokushima Univ., 2.pLED, Tokushima Univ., 3.Hyogo Univ., 4.Chubu Univ., 5.Nichia Corp.)

11:00 AM - 11:15 AM

[23a-B101-8] Effect of post-treatment with atmospheric pressure plasma on metal oxide thin films deposited by mist CVD

〇(M2)Hiroya Kobayashi¹, Takeda Keigo¹, Hiramatsu Mineo¹ (1.Meijo Univ.)

11:15 AM - 11:30 AM

[23a-B101-9] AlN and Al₂O₃ multiple gas barrier films fabricated by low-temperature atomic layer deposition

〇(D)Kentaro Saito¹, Kazuki Yoshida¹, Masanori Miura², Kensaku Kanomata², Bashir Ahmmad¹, Shigeru Kubota¹, Fumihiko Hirose¹ (1.Yamagata Univ., 2.ROEL Yamagata Univ.)

11:30 AM - 11:45 AM

▲ [23a-B101-10] Effect of the surface engineered silicon quantum dots in hybrid perovskite solar cells

〇Svrcek Vladimir¹, Calum McDonald¹, Takuya Matsui¹ (1.National Institute of Advanced Industrial Science and Technology (AIST))

Sessions

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[22p-A406-1~15] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[22p-A406-1] Plasma-induced electronic defects ~ effects of Ar plasma on H-terminated Si surface~

△ [22p-A406-2] Effects of Plasma-damaged Surface Structure on Mechanical Property Change in Silicon Nitride Films

△ [22p-A406-3] 【Highlighted Presentation】Surface Reaction Mechanisms to Realize High-throughput SiN ALE

[22p-A406-4] Self-limiting cyclic etching of SiGe by using plasma-assisted thermal-cyclic method

[22p-A406-5] Etching characteristics of GaN in Fluorocarbon plasmas

[22p-A406-6] Ultra-fast Etching of Photo resist by Reactive Atmospheric-pressure Thermal Plasma Jet

[22p-A406-7] Influence of pulse operation on ionic composition in a dual-frequency capacitively-coupled Ar/C₄F₈/O₂ plasma

[22p-A406-8] [Young Scientist Presentation Award Speech] Imaging measurement of angular distribution of high-speed particles from a dual-frequency capacitively-coupled plasma incident on an RF electrode

[22p-A406-9] Low-temperature Formation of High-Performance IGZO Thin Film Transistors using Reactive Plasma Processes

[22p-A406-10] Room-temperature Growth of HfO₂/SiO₂ film by Neutral Beam Enhanced Atomic Layer Deposition with Electrical Characteristics

△ [22p-A406-11] Investigation of Bonding State of Fluorocarbon Films and Its Properties

△ [22p-A406-12] Effect of Amplitude Modulated Discharge Method on TEOS Plasma CVD

△ [22p-A406-13] Deposition of rutile titanium oxide thin film using high power pulsed magnetron sputtering

[22p-A406-14] Crystallinity control of LiTiO film by plasma sputtering and its application to the negative electrode of Li-ion batteries

[22p-A406-15] Preparation of the gradient element functional thin films of Fe, Ti by sputtering deposition method using powder mixture targets

[23a-B101-1~10] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[23a-B101-1] Relation between flip-flop characteristics of PTFE sputtered film and OH group

[23a-B101-2] Plasma polymers are affected by chemical structure of monohydric alcohols.

[23a-B101-3] Analysis of Contribution of Active Species to Synthesis Mechanism of Hydrogenated Amorphous Carbon Films Using Machine Learning

△ [23a-B101-4] Maximization of Nitrogen Radical Flux for High Through-Put Deposition of Boron Nitride Films with Controlled Bonding States

△ [23a-B101-5] TiN Film Formed by DC-Filtered Arc Deposition with Anode Acting as Droplet Filter

△ [23a-B101-6] Development and basic performance evaluation of dielectric barrier discharge device using transparent electrode to realize simultaneous UV/NIR and plasma treatment

△ [23a-B101-7] Effects of Atmospheric Pressure Low Temperature O₂ Plasma-Assisted Annealing
on Pt-Doped Rutile Phase TiO₂ Nanoparticles

[23a-B101-8] Effect of post-treatment with atmospheric pressure plasma on metal oxide thin films deposited by mist CVD

[23a-B101-9] AlN and Al₂O₃ multiple gas barrier films fabricated by low-temperature atomic layer deposition

▲ [23a-B101-10] Effect of the surface engineered silicon quantum dots in hybrid perovskite solar cells

Authenticate

Sessions

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[22p-A406-1~15] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

△ [22p-A406-2] Effects of Plasma-damaged Surface Structure on Mechanical Property Change in Silicon Nitride Films

△ [22p-A406-3] 【Highlighted Presentation】Surface Reaction Mechanisms to Realize High-throughput SiN ALE

△ [22p-A406-11] Investigation of Bonding State of Fluorocarbon Films and Its Properties

△ [22p-A406-12] Effect of Amplitude Modulated Discharge Method on TEOS Plasma CVD

△ [22p-A406-13] Deposition of rutile titanium oxide thin film using high power pulsed magnetron sputtering

[23a-B101-1~10] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

△ [23a-B101-4] Maximization of Nitrogen Radical Flux for High Through-Put Deposition of Boron Nitride Films with Controlled Bonding States

△ [23a-B101-5] TiN Film Formed by DC-Filtered Arc Deposition with Anode Acting as Droplet Filter

△ [23a-B101-6] Development and basic performance evaluation of dielectric barrier discharge device using transparent electrode to realize simultaneous UV/NIR and plasma treatment

△ [23a-B101-7] Effects of Atmospheric Pressure Low Temperature O2 Plasma-Assisted Annealingon Pt-Doped Rutile Phase TiO2 Nanoparticles

▲ [23a-B101-10] Effect of the surface engineered silicon quantum dots in hybrid perovskite solar cells

Authenticate

△ [23a-B101-7] Effects of Atmospheric Pressure Low Temperature O₂ Plasma-Assisted Annealing
on Pt-Doped Rutile Phase TiO₂ Nanoparticles