[23a-P04-1~2] 13.3 Insulator technology

[23a-P04-1] Formation energy at a stable site for halogen ions in Si₃N₄ and SiO₂ films

〇Tomoki Oku¹, Masahiro Totsuka¹, Hajime Sasaki¹ (1.Mitsubishi Electric)

Keywords:humidity resistance, halogen ion, Molecular orbital calculation

The formation energy (deltaH_d) of halogen ions in Si₃N₄ and SiO₂ films at stable positions was calculated by the semi-empirical molecular orbital method. By assuming that deltaH_d is equal to the deformation and electrostatic interaction between the ion and the mesh-like crystal structure, it can be explained that deltaH_d is larger for divalent ions than for monovalent ions.