Poster presentation

[23a-P04-1~2] 13.3 Insulator technology

Fri. Sep 23, 2022 9:30 AM - 11:30 AM P04 (Arena)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[23a-P04-1] Formation energy at a stable site for halogen ions in Si₃N₄ and SiO₂ films

〇Tomoki Oku¹, Masahiro Totsuka¹, Hajime Sasaki¹ (1.Mitsubishi Electric)

9:30 AM - 11:30 AM

[23a-P04-2] Evaluation of residual OH groups in low-temperature Si oxide films by FT-IR differential spectra

〇Di Pu¹, Susumu Horita¹ (1.Jaist)

Oral presentation

[23p-C102-1~14] 13.3 Insulator technology

Fri. Sep 23, 2022 1:15 PM - 5:00 PM C102 (C102)

Takanobu Watanabe(Waseda Univ.), Koji Kita(Univ. of Tokyo)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:15 PM - 1:30 PM

[23p-C102-1] Nanoscale distribution of subgap excitations in β-Si₃N₄ observed by valence EELS using low-voltage monochromated STEM

〇Takanori Asano¹, Manabu Tezura¹, Masumi Saitoh¹, Hiroki Tanaka¹, Jun Kikkawa², Koji Kimoto² (1.Kioxia, 2.NIMS)

1:30 PM - 1:45 PM

[23p-C102-2] Effects of Underside-Si Annealing on Charge Breakdown of LPCVD SiN Film

〇Hayato Miyagawa¹, Kosuke Bunya¹, Hisatsugu Kurita², Masataka Nakamura², Yoshiaki Kamigaki³ (1.Kagawa Univ., 2.ROHM Hamamatsu., 3.E&B Research Lab.)

1:45 PM - 2:00 PM

[23p-C102-3] Determination of the charge centroids of electrons and holes trapped in the charge trap layer of MONOS-type nonvolatile memory elements (Ⅲ)

〇Akari Matsumoto¹, Kiyoteru Kobayashi¹ (1.Tokai Univ.)

2:00 PM - 2:15 PM

△ [23p-C102-4] Carrier trapping characteristics of nonvolatile memory using fluoographene

〇(M1)Rino Kawashima¹, Hiroshi Nohira¹, Ryousuke Ishikawa¹, Yuichiro Mitani¹ (1.Tokyo City Univ.)

2:15 PM - 2:30 PM

[23p-C102-5] Hard X-ray Photoemission Spectroscopy on Localization of Interface Dipole Modulation in SiO₂/TiO_x/HfO₂ MIM structure

〇Yoshiharu Kirihara¹, Shunichi Ito¹, Akira Yasui², Noriyuki Miyata³, Hiroshi Nohira¹ (1.Tokyo City Univ., 2.JASRI, 3.AIST)

2:30 PM - 2:45 PM

[23p-C102-6] Hard X-ray Photoemission Spectroscopy Study on Interface Dipole Modulation Mechanism in Al₂O₃/TiO_x/SiO₂ MOS structure

〇Yoshiharu Kirihara¹, Shunichi Ito¹, Akira Yasui², Noriyuki Miyata³, Hiroshi Nohira¹ (1.Tokyo City Univ., 2.JASRI, 3.AIST)

2:45 PM - 3:00 PM

△ [23p-C102-7] Relationship between the stacking order of monatomic layers in LaAlO₃ dipole layer and the dipole direction at the perovskite oxide epitaxial interface verified by lateral force microscopy

〇Atsushi Tamura¹, Koji Kita^1,2 (1.Dept. of Materials Engineering, Univ. of Tokyo, 2.Dept. of Advanced Materials Science, Univ. of Tokyo)

3:15 PM - 3:30 PM

[23p-C102-8] Stress of Al₂O₃ film by ALD using high purity ozone

〇Takayuki Hagiwara¹, Soichiro Motoda¹, Naoto Kameda¹, Ken Nakamura², Hidehiko Nonaka² (1.MEIDEN NPI INC., 2.AIST)

3:30 PM - 3:45 PM

▲ [23p-C102-9] (100) and (111) n-Ge/ GeO_x/ Al₂O₃ MOS Interface Properties with Different Annealing Temperature and Atmosphere

〇Xueyang Han¹, Chia Tsong Chen¹, Mengnan Ke², Ziqiang Zhao¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. Tokyo, 2.Chiba Univ.)

3:45 PM - 4:00 PM

[23p-C102-10] Investigation of PMA metal species effective for improving GeO2 film quality and
GeO2/Ge interface properties

〇Akari Kekke¹, Kota Kanno¹, Kugo Matsuura¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.TUAT)

4:00 PM - 4:15 PM

[23p-C102-11] Study of Introduction of Post Metallization Annealing at the GeO2/Ge Interface

〇Kugo Matsuura¹, Kota Kanno¹, Akari Kekke¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.TUAT)

4:15 PM - 4:30 PM

[23p-C102-12] Preparation and evaluation of GeO₂ film by two-step oxidation

〇Hajime Saito¹, Yuta Tsuchiya¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.TUAT)

4:30 PM - 4:45 PM

[23p-C102-13] Study of water resistance of GeO2 films

〇Takehito Shibuya¹, Keita Ishiduka¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.TUAT)

4:45 PM - 5:00 PM

[23p-C102-14] Investigation of Low Temperature Oxidation of Si Substrates Using Chemical Solutions

〇Hiroki Takahashi¹, Gen Shimizu¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.TUAT)

Sessions

13 Semiconductors » 13.3 Insulator technology

[23a-P04-1~2] 13.3 Insulator technology

[23a-P04-1] Formation energy at a stable site for halogen ions in Si₃N₄ and SiO₂ films

[23a-P04-2] Evaluation of residual OH groups in low-temperature Si oxide films by FT-IR differential spectra

[23p-C102-1~14] 13.3 Insulator technology

[23p-C102-1] Nanoscale distribution of subgap excitations in β-Si₃N₄ observed by valence EELS using low-voltage monochromated STEM

[23p-C102-2] Effects of Underside-Si Annealing on Charge Breakdown of LPCVD SiN Film

[23p-C102-3] Determination of the charge centroids of electrons and holes trapped in the charge trap layer of MONOS-type nonvolatile memory elements (Ⅲ)

△ [23p-C102-4] Carrier trapping characteristics of nonvolatile memory using fluoographene

[23p-C102-5] Hard X-ray Photoemission Spectroscopy on Localization of Interface Dipole Modulation in SiO₂/TiO_x/HfO₂ MIM structure

[23p-C102-6] Hard X-ray Photoemission Spectroscopy Study on Interface Dipole Modulation Mechanism in Al₂O₃/TiO_x/SiO₂ MOS structure

△ [23p-C102-7] Relationship between the stacking order of monatomic layers in LaAlO₃ dipole layer and the dipole direction at the perovskite oxide epitaxial interface verified by lateral force microscopy

[23p-C102-8] Stress of Al₂O₃ film by ALD using high purity ozone

▲ [23p-C102-9] (100) and (111) n-Ge/ GeO_x/ Al₂O₃ MOS Interface Properties with Different Annealing Temperature and Atmosphere

[23p-C102-10] Investigation of PMA metal species effective for improving GeO2 film quality and
GeO2/Ge interface properties

[23p-C102-11] Study of Introduction of Post Metallization Annealing at the GeO2/Ge Interface

[23p-C102-12] Preparation and evaluation of GeO₂ film by two-step oxidation

[23p-C102-13] Study of water resistance of GeO2 films

[23p-C102-14] Investigation of Low Temperature Oxidation of Si Substrates Using Chemical Solutions

Authenticate

Sessions

13 Semiconductors » 13.3 Insulator technology

[23a-P04-1~2] 13.3 Insulator technology

[23p-C102-1~14] 13.3 Insulator technology

△ [23p-C102-4] Carrier trapping characteristics of nonvolatile memory using fluoographene

△ [23p-C102-7] Relationship between the stacking order of monatomic layers in LaAlO3 dipole layer and the dipole direction at the perovskite oxide epitaxial interface verified by lateral force microscopy

▲ [23p-C102-9] (100) and (111) n-Ge/ GeOx/ Al2O3 MOS Interface Properties with Different Annealing Temperature and Atmosphere

Authenticate

△ [23p-C102-7] Relationship between the stacking order of monatomic layers in LaAlO₃ dipole layer and the dipole direction at the perovskite oxide epitaxial interface verified by lateral force microscopy

▲ [23p-C102-9] (100) and (111) n-Ge/ GeO_x/ Al₂O₃ MOS Interface Properties with Different Annealing Temperature and Atmosphere