[23p-C102-1~14] 13.3 絶縁膜技術

▲ [23p-C102-9] (100) and (111) n-Ge/ GeO_x/ Al₂O₃ MOS Interface Properties with Different Annealing Temperature and Atmosphere

〇Xueyang Han¹、Chia Tsong Chen¹、Mengnan Ke²、Ziqiang Zhao¹、Kasidit Toprasertpong¹、Mitsuru Takenaka¹、Shinichi Takagi¹ (1.Univ. Tokyo、2.Chiba Univ.)

キーワード：Germanium, interface state, annealing

We have examined Al₂O₃ /GeO_x / (111) and (100) n-Ge MOS interface properties with different annealing temperature and atmosphere. After PDA at 550 ^oC, the good MOS interfaces with the minimum D_it of ~3×10¹¹ eV^-1cm^-2 have been obtained. This result has proved that annealing at 550 ^oC used in the smart-cut process is still applicable to GOI structures.