[23p-C102-1~14] 13.3 Insulator technology

[23p-C102-2] Effects of Underside-Si Annealing on Charge Breakdown of LPCVD SiN Film

〇Hayato Miyagawa¹, Kosuke Bunya¹, Hisatsugu Kurita², Masataka Nakamura², Yoshiaki Kamigaki³ (1.Kagawa Univ., 2.ROHM Hamamatsu., 3.E&B Research Lab.)

Keywords:SiN, Qbd, Si-Annealing

In our previous study, Si bonding defects with some oxygen back-bonds were detected by ESR and considered to cause the dielectric breakdown in the SiN capacitor film grown by LP-CVD, however, details of morphological structure have not been investigated. This time, we observed the roughness and the crystal distortion around the native oxide layer under SiN films using AFM(Atomic Force Microscopy), and TEM(Transmission Electron Microscopy), SEM(Scanning Electron Microscopy), and found that in some annealing conditions of Si surface, the roughness increases drastically and shows the correlation to the charge breakdown(Qbd) frequency.