Characterization of Interface Traps Near Valence Band by Split <em>C</em>-<em>V</em> measurement

Presentation information

Oral presentation

CS Code-sharing session » 【CS.9】 Code-sharing Session of 13.7 & 15.6

Thu. Mar 24, 2022 2:00 PM - 6:15 PM E302 (E302)

Masashi Kato(Nagoya Inst. of Tech.), Takuma Kobayashi(Osaka Univ.)

3:00 PM - 3:15 PM

〇(D)Gyozen Sai¹, Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Tsukuba Univ)

Keywords:P-channel 4H-SiC MOSFET, density of interface traps, split C-V measurement