[25p-E104-1~21] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[25p-E104-5] Mass spectrometric measurement of radical and positive ion species incident into substrate in low-pressure RF plasmas in tetraethoxysilane gases

〇(M2)Koichi Ishii¹, Shun Sasaki¹, Mao Kamiyama¹, Hu Li², Kazuki Denpoh², Akinori Oda¹ (1.Chiba Institute of Technology, 2.Tokyo Electron Technology Solutions Ltd.)

Keywords:Mass, Tetraethoxysilane

Silicon dioxide (SiO2) films have been used as intermetallic insulators and passivation films in semiconductors. In this process, plasma-assisted chemical vapor deposition using tetraethoxysilane (TEOS) gas as the raw material gas is often used. However, there are few reports on the decomposition process of TEOS gas in the plasma and the basic characteristics of TEOS plasma. In this study, the radical species and positive ion species incident on the substrate from the TEOS gas RF plasma diluted with Ar gas were measured using a quadrupole mass spectrometer, and the input power dependence of these particle species was investigated.