Daisuke Ohori

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Speaker, Author, Co-Author

Fri. Mar 17, 2023 9:00 AM - 11:30 AM A205 (Building No. 6)

Oral presentation
| 8 Plasma Electronics
| 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[17a-A205-1~9] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

9:45 AM - 10:00 AM

[17a-A205-4] HfO2/SiO2 Interface Control by Neutral Beam Enhanced Atomic Layer Deposition

〇Daisuke Ohori¹, Takuya Ozaki¹, Yiming Li², Kazuhiko Endo¹, Seiji Samukawa^2,1 (1.IFS, Tohoku Univ., 2.NYCU)

Thu. Mar 16, 2023 1:00 PM - 5:45 PM B401 (Building No. 2)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[16p-B401-1~13] 15.4 III-V-group nitride crystals

5:00 PM - 5:15 PM

[16p-B401-11] InGaN Etching Caracteristic by Hydrogen Iodide (HI) Neutral Beam

〇Daisuke Ohori¹, Takahiro Ishihara¹, Xuelun Wang^2,3, Nobuhiro Natori⁴, Daisuke Sato⁴, Yiming Li⁵, Kazuhiko Endo¹, Seiji Samukawa^5,1 (1.IFS, Tohoku Univ., 2.AIST, 3.IMaSS, Nagoya Univ., 4.Showa Denko K.K., 5.NYCU)

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