Session information

Poster presentation

13 Semiconductors » 13.3 Insulator technology

[15p-PA04-1~3] 13.3 Insulator technology

Wed. Mar 15, 2023 4:00 PM - 6:00 PM PA04 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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4:00 PM - 6:00 PM

[15p-PA04-1] Charge trapping characteristics of manganese-doped and vanadium-dope silicon nitride films

〇Daiki Morohoshi¹, Akari Matsumoto¹, Yuta Nishigaki¹, Tomoya Satonaka², Yuto Ito², Yuki Arakawa², Takumi Abe², Kiyoteru Kobayashi^1,2 (1.Tokai Univ. Grad. Sch. Eng., 2.Tokai Univ. Sch. Eng.)

4:00 PM - 6:00 PM

[15p-PA04-2] Deposition temperature dependence of amount of residual OH groups in low-temperature Si oxide films after in-situ post-deposition heating

〇Di Pu¹, Susumu Horita¹ (1.JAIST)

4:00 PM - 6:00 PM

[15p-PA04-3] Formation energy at a stable site for diatomic molecules in Si₃N₄ and SiO₂ films

〇Tomoki Oku¹, Masahiro Totsuka¹, Hajime Sasaki¹ (1.Mitsubishi Electric)

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Session information

[15p-PA04-1~3] 13.3 Insulator technology

[15p-PA04-1] Charge trapping characteristics of manganese-doped and vanadium-dope silicon nitride films

[15p-PA04-2] Deposition temperature dependence of amount of residual OH groups in low-temperature Si oxide films after in-situ post-deposition heating

[15p-PA04-3] Formation energy at a stable site for diatomic molecules in Si3N4 and SiO2 films

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[15p-PA04-3] Formation energy at a stable site for diatomic molecules in Si₃N₄ and SiO₂ films