Session information

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[16p-E102-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Mar 16, 2023 1:30 PM - 4:45 PM E102 (Building No. 12)

Takayoshi Oshima(NIMS), Kentaro Kaneko(Ritsumeikan Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[16p-E102-1] Growth temperature dependence of Ga₂O₃ growth on ScAlMgO₄ by mist CVD

〇Soma Kato¹, Syuhei Yamashita¹, Yuichi Wada¹, Hitoshi Takane³, Yuto Yamafuji¹, Junjiro Kikawa¹, Makoto Matsukura⁴, Takahiro Kojima⁴, Takashi Shinohe⁵, Momoko Deura², Kentaro Kaneko³, Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.R-GIRO, 3.ROST, 4.OXIDE Co., 5.FLOSFIA Inc.)

1:45 PM - 2:00 PM

[16p-E102-2] TEM characterization of defects in κ-(In_xGa_1-x)₂O₃ thin film grown on (001) FZ-grown ε-GaFeO₃ substrate by mist CVD

〇Osamu Ueda¹, Hiroyuki Nishinaka², Noriaki Ikenaga³, Noriyuki Hasuike², Masahiro Yoshimoto² (1.Meiji Univ., 2.Kyoto Inst. Tech., 3.Kanazawa Inst. Tech.)

2:00 PM - 2:15 PM

[16p-E102-3] Electronic structure and dielectric constant in gallium oxide by quasi-particle self-consistent GW method

〇Kazuki Muranaka¹, Ko Hyodo¹, Chandro Pardede¹, Masao Obata¹, Tatsuki Oda¹ (1.Kanazawa Univ.)

2:15 PM - 2:30 PM

[16p-E102-4] Evaluation of line shaped voids in β-Ga₂O₃ grown by the vertical Bridgman method

〇(M1)Naoto Kobayashi¹, Keigo Hoshikawa¹, Toshinori Taishi¹ (1.Shinshu Univ.)

2:30 PM - 2:45 PM

[16p-E102-5] Reduction of dislocation density in α-Ga₂O₃ epilayers by maskless method

〇Yuichi Oshima¹, Hiroyuki Ando², Takashi Shinohe² (1.NIMS, 2.FLOSFIA)

2:45 PM - 3:00 PM

[16p-E102-6] Thermal Stability of Selective-Area-Growth-α-Ga₂O₃ on Sapphire Substrates
Investigated by Micro-Raman Spectroscopy

〇Riena Jinno¹, Masami Kanzaki², Susumu Fukatsu¹ (1.Univ. Tokyo, 2.Okayama Univ.)

3:00 PM - 3:15 PM

[16p-E102-7] Band Structure Analysis of α-Ga₂O₃/Al₂O₃ Superlattices

〇Takahiro Kawamura¹, Toru Akiyama¹ (1.Mie Univ.)

3:30 PM - 3:45 PM

▲ [16p-E102-8] Transient Photocapacitance Spectroscopy of Deep-levels in (001) β-Ga₂O₃

〇(DC)Fenfen Fenda Florena¹, Aboulaye Traore¹, Takeaki Sakurai¹ (1.Univ. of Tsukuba)

3:45 PM - 4:00 PM

[16p-E102-9] Time-resolved photoluminescence spectroscopy for β-Ga₂O₃ via multiphoton excitation

Tomoka Nishikawa¹, 〇Tomoyuki Tanikawa¹, Hiroto Honda¹, Ken Goto², Hisashi Murakami², Yoshinao KumagaiKumagai², Atsushi Tanaka³, Yoshio Honda³, Hiroshi Amano³, Masahiro Uemukai¹, Ryuji Katayama¹ (1.Osaka Univ., 2.TUAT, 3.IMaSS, Nagoya Univ.)

4:00 PM - 4:15 PM

[16p-E102-10] Anisotropic HCl gas etching of (001) β-Ga₂O₃ substrate

〇Takayoshi Oshima¹, Yuichi Oshima¹ (1.NIMS)

4:15 PM - 4:30 PM

▲ [16p-E102-11] Improvement in Electrical Properties of Ga₂O₃ Schottky Barrier Diodes by Nitrogen Radical Treatment

〇Zhenwei Wang¹, Takahiro Kitada^1,2, Sandeep Kumar¹, Masataka Higashiwaki^1,2 (1.NICT, 2.OMU)

4:30 PM - 4:45 PM

[16p-E102-12] NiO Thin Film Formed on Heated β-Ga₂O₃ Substrate by Electron Beam Evaporation

〇Shinji Nakagomi¹, Takashi Yasuda¹ (1.Ishinomaki Senshu)

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