Poster presentation

13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

[16p-PA04-1~24] 13.7 Compound and power devices, process technology and characterization

Thu. Mar 16, 2023 1:30 PM - 3:30 PM PA04 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 3:30 PM

[16p-PA04-1] Two-dimensional characterization of Au/Ni/p⁺-SiC Schottky contacts by scanning internal photoemission microscopy

〇Hiroki Imabayashi¹, Hitose Sawazaki¹, Haruto Yoshimura¹, Natsuki Ito¹, Masashi Kato², Kenji Shiojima¹ (1.Univ. of Fukui, 2.Nagoya Inst. Tech.)

1:30 PM - 3:30 PM

[16p-PA04-2] Ab initio study for orientation dependence of band alignments at 4H-SiC/SiO₂ interface

〇(M1)Shun Matsuda¹, Toru Akiyama¹, Tetsuo Hatakeyama², Kenji Shiraishi³, Takashi Nakayama⁴ (1.Mie Univ., 2.Toyama Pref. Univ., 3.Nagoya Univ., 4.Chiba Univ.)

1:30 PM - 3:30 PM

[16p-PA04-3] Electron Spin Resonance spectroscopy (ESR/EDMR) study on interface defects at (11-20) face (a-face) 4H-SiC/SiO₂ interfaces

〇Ren Kondo¹, Mitsuru Sometani^2,3, Heiji Watanabe³, Takahide Umeda¹ (1.Univ. of Tsukuba, 2.AIST, 3.Osaka Univ.)

1:30 PM - 3:30 PM

[16p-PA04-4] Fabrication Process of Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistor of 4H-SiC Utilizing Wet Oxidation

〇Yusuke Sato^1,2, Satoshi Watanabe², Masao Sakuraba^1,2, Shigeo Sato^1,2 (1.Tohoku Univ., 2.RIEC)

1:30 PM - 3:30 PM

[16p-PA04-5] Simulation of critical angles for channeled ion implantation into 4H-SiC

〇Tomoaki Nishimura¹ (1.Hosei Univ.)

1:30 PM - 3:30 PM

[16p-PA04-6] Comparison of properties of plasma-induced defects in GaN and GaAs

〇Akari Yamaya¹, Mayu Oshima¹, Yuta Kuwayama¹, Yutaro Tanaka¹ (1.Tokyo Metro. Univ.)

1:30 PM - 3:30 PM

[16p-PA04-7] Photoelectrochemical etching of AlGaN/GaN heterostructure and control of reaction rates

〇Takuya Togashi¹, Yugo Oki¹, Yoshito Osawa¹, Ryota Ochi¹, Taketomo Sato¹ (1.RCIQE)

1:30 PM - 3:30 PM

[16p-PA04-8] Low-damage PEC etching on p-GaN surface and its electrochemical characterization

〇Umi Takatsu¹, Kouta Kubo¹, Taketomo Sato¹ (1.RCIQE,Hokkaido Univ.)

1:30 PM - 3:30 PM

[16p-PA04-9] Evaluation of nitrogen atoms on GaN surface using photoelectron holography

〇Hazuki Natsui¹, Mutsunori Uenuma¹, Shingo Kuwaharada¹, Hiroto Tomita¹, Yusuke Hashimoto¹, Tomohiro Matsushita¹, Yukiharu Uraoka¹ (1.NAIST)

1:30 PM - 3:30 PM

[16p-PA04-10] Formation and characterization of SiO₂ by Atomic-Species-Enhanced Chemical Vapor Deposition (2)

〇Sho Yamagata¹, Ryota Ouchi¹, Sogo Shikata¹, Masakazu Furukawa², Akihiro Wakahara¹, Hiroshi Okada¹ (1.Toyohashi Univ. Tech., 2.Aries Research Limited Company)

1:30 PM - 3:30 PM

[16p-PA04-11] Sub-bandgap-light-assisted C-V characteristics of MOS structure with Mg-doped p-GaN

〇Takahide Nukariya¹, Yuya Tamamura¹, Umi Takatsu¹, Taketomo Sato¹, Masamichi Akazawa¹ (1.RCIQE, Hokkaido Univ.)

1:30 PM - 3:30 PM

[16p-PA04-12] Evaluation of gap-states near conduction band in the vicinity of MOS interface for Mg-ion-implanted GaN after ultra-high-pressure annealing

〇Yuki Hatakeyama¹, Masamichi Akazawa¹, Tetsuo Narita², Michal Bockowski^3,4, Tetsu Kachi³ (1.RCIQE, Hokkaido Univ., 2.Toyota Central R&D Labs., Inc., 3.IMaSS, Nagoya Univ., 4.Unipress, Poland)

1:30 PM - 3:30 PM

▲ [16p-PA04-13] Comparison of Thermal and ArF Excimer Laser Activation of Mg-doped GaN

〇MariaEmma Castil Villamin¹, Naotaka Iwata¹ (1.Toyota Tech Inst)

1:30 PM - 3:30 PM

[16p-PA04-14] Evaluation and Consideration of Heating Efficiency in Microwave Annealing of GaN

〇Takashi Nakamura¹, Heajeong Cheong², Atsushi Tanaka², Hiroshi Amano² (1.AIST, 2.Nagoya Univ.)

1:30 PM - 3:30 PM

[16p-PA04-15] Investigation of Topology Optimization for Design of Field Limiting Rings in GaN Vertical Power Devices

〇(M1)Takuma Yamaguchi¹, Katsuya Nomura¹, Yoshiyuki Hattori² (1.Kwansei Gakuin Univ., 2.Daido Univ.)

1:30 PM - 3:30 PM

[16p-PA04-16] Low on voltage and high current GaN heterojunction diode for energy harvesting

〇Kouki Hino¹, MariaEmma Villamin¹, Iwata Naotaka¹ (1.Toyota Tech. Inst.)

1:30 PM - 3:30 PM

[16p-PA04-17] MHz Analog-controlled Synchronous Rectification Circuit using GaN-HEMTs

〇Toshihide Ide^1,2, Mitsuaki Shimizu^1,2, Noriyuki Takada¹ (1.AIST RIAEP, 2.NU-AIST GaN-OIL)

1:30 PM - 3:30 PM

[16p-PA04-18] Investigation of nitride semiconductor integrated circuits for driving small actuators

〇(M1)Yoshiki Akira¹, Akamatsu Tatsuya¹, Mashimo Tomoaki², Okada Hiroshi¹ (1.Toyohashi Univ.Technol., 2.Okayama Univ.)

1:30 PM - 3:30 PM

[16p-PA04-19] Fabrication of the Ag/Si Schottky Barrier Diode by Patterning of Ag Nanoink: Effects of the Sintering Conditions for Diode Characteristics

〇Masashi Saito¹, Toshiyuki Tamai¹ (1.ORIST)

1:30 PM - 3:30 PM

▲ [16p-PA04-20] Analysis of Lateral Superjunction Silicon Power Device with Multiple Layers by TCAD Simulation

〇(M2)Peilin Ji¹, Munetoshi Fukui¹, Takuya Saraya¹, Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1.The Univ. of Tokyo)

1:30 PM - 3:30 PM

[16p-PA04-21] Evaluation of the Baliga figure of merit for ultra-wide bandgap oxide alloys

〇Yuichi Ota¹, Kentaro Kaneko², Takeyoshi Onuma³, Shizuo Fujita⁴ (1.TIRI, 2.Ritsumeikan Univ., 3.Kogakuin Univ., 4.Kyoto Univ.)

1:30 PM - 3:30 PM

[16p-PA04-22] Comparison of body diode recovery characteristics of 650V power devices

〇Yoshiyuki Hattori¹, Tetsu Kachi² (1.Daido Univ., 2.Nagoya Univ. IMaSS)

1:30 PM - 3:30 PM

[16p-PA04-23] Stress-relieving Interconnection for Power Device Packaging using Fe-Ni Alloy Electroplating with Low Thermal Expansion

〇Keiko Koshiba^1,2, Kohei Tatsumi^1,2 (1.Waseda Univ. IPS, 2.Waseda Univ. IPS Research Center)

1:30 PM - 3:30 PM

▲ [16p-PA04-24] Non-Destructive Failure Analysis Method for Semiconductor Packages Based on Dynamic Thermal Response

〇Byongjin Ma¹, Taehee Jung¹, Sungsoon Choi¹ (1.KETI)

Session information

[16p-PA04-1~24] 13.7 Compound and power devices, process technology and characterization

[16p-PA04-1] Two-dimensional characterization of Au/Ni/p⁺-SiC Schottky contacts by scanning internal photoemission microscopy

[16p-PA04-2] Ab initio study for orientation dependence of band alignments at 4H-SiC/SiO₂ interface

[16p-PA04-3] Electron Spin Resonance spectroscopy (ESR/EDMR) study on interface defects at (11-20) face (a-face) 4H-SiC/SiO₂ interfaces

[16p-PA04-4] Fabrication Process of Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistor of 4H-SiC Utilizing Wet Oxidation

[16p-PA04-5] Simulation of critical angles for channeled ion implantation into 4H-SiC

[16p-PA04-6] Comparison of properties of plasma-induced defects in GaN and GaAs

[16p-PA04-7] Photoelectrochemical etching of AlGaN/GaN heterostructure and control of reaction rates

[16p-PA04-8] Low-damage PEC etching on p-GaN surface and its electrochemical characterization

[16p-PA04-9] Evaluation of nitrogen atoms on GaN surface using photoelectron holography

[16p-PA04-10] Formation and characterization of SiO₂ by Atomic-Species-Enhanced Chemical Vapor Deposition (2)

[16p-PA04-11] Sub-bandgap-light-assisted C-V characteristics of MOS structure with Mg-doped p-GaN

[16p-PA04-12] Evaluation of gap-states near conduction band in the vicinity of MOS interface for Mg-ion-implanted GaN after ultra-high-pressure annealing

▲ [16p-PA04-13] Comparison of Thermal and ArF Excimer Laser Activation of Mg-doped GaN

[16p-PA04-14] Evaluation and Consideration of Heating Efficiency in Microwave Annealing of GaN

[16p-PA04-15] Investigation of Topology Optimization for Design of Field Limiting Rings in GaN Vertical Power Devices

[16p-PA04-16] Low on voltage and high current GaN heterojunction diode for energy harvesting

[16p-PA04-17] MHz Analog-controlled Synchronous Rectification Circuit using GaN-HEMTs

[16p-PA04-18] Investigation of nitride semiconductor integrated circuits for driving small actuators

[16p-PA04-19] Fabrication of the Ag/Si Schottky Barrier Diode by Patterning of Ag Nanoink: Effects of the Sintering Conditions for Diode Characteristics

▲ [16p-PA04-20] Analysis of Lateral Superjunction Silicon Power Device with Multiple Layers by TCAD Simulation

[16p-PA04-21] Evaluation of the Baliga figure of merit for ultra-wide bandgap oxide alloys

[16p-PA04-22] Comparison of body diode recovery characteristics of 650V power devices

[16p-PA04-23] Stress-relieving Interconnection for Power Device Packaging using Fe-Ni Alloy Electroplating with Low Thermal Expansion

▲ [16p-PA04-24] Non-Destructive Failure Analysis Method for Semiconductor Packages Based on Dynamic Thermal Response

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