Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[17p-B414-1~15] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Fri. Mar 17, 2023 1:00 PM - 5:00 PM B414 (Building No. 2)

Koichiro Saga(Sony), Nobuya Mori(Osaka Univ.), Hajime Tanaka(阪大)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

△ [17p-B414-1] Deformation and contact path of PVA brush nodule in relative motion on a flat plate

〇(M1C)Shota Suzuki¹, Yuki Mizushima¹, Satomi Hamada², Ryota Koshino², Akira Fukunaga², Toshiyuki Sanada¹ (1.Shizuoka Univ., 2.Ebara Corp)

1:15 PM - 1:30 PM

△ [17p-B414-2] Measurements of liquid film thickness formed
on a two-fluid jet-sprayed surface

〇Shinsuke Watanabe¹, Kensho Yamakawa¹, Yuki Mizushima¹, Hiroki Takahashi², Satomi Hamada², Masayoshi Imai², Toshiyuki Sanada¹ (1.Shizuoka Univ., 2.Ebara Corp.)

1:30 PM - 1:45 PM

[17p-B414-3] Fabrication of flat Ge(111) surfaces treated with TMAH aqueous solution

〇Kazuki Matsuo¹, Hitoshi Suzuki¹, Hiroyuki Sakaue¹ (1.Hiroshima Univ.)

1:45 PM - 2:00 PM

[17p-B414-4] Analysis of dependence on substrate crystal plane orientation in Si etching process with the HF/HNO₃ mixture

〇Takashi Oinoue¹, Kana Kurogi¹, Tomoki Hirano¹, Kenya Nishio¹, Suguru Saito¹, Atsushi Okuyama¹, Yoshiya Hagimoto¹, Hayato Iwamoto¹ (1.Sony Semiconductor)

2:00 PM - 2:15 PM

△ [17p-B414-5] Graphene Oxide Assisted Etching of Si under Negative Bias Condition

〇(M1)YUTA GOTO¹, WATARU KUBOTA¹, TORU UTSUNOMIYA¹, TAKASHI ICHII¹, HIROYUKI SUGIMURA¹ (1.Kyoto Univ.)

2:15 PM - 2:30 PM

▲ [17p-B414-6] The effect of post metallization annealing sequence on the Pt gate etching immunity of MFSFET with ferroelectric non-doped HfO₂

〇Zhang Xinyue¹, Joong-Won Shin¹, Tanuma Masakazu¹, Ohmi Shun-ichiro¹ (1.Tokyo Inst. of Technology)

2:30 PM - 2:45 PM

[17p-B414-7] Characterization of Electronic charged States of Si-QDs on Thermally Oxidized SOI Substrates as Evaluated by Using an AFM/Kelvin Probe Force Technique

〇(D)Yuki Imai¹, Katsunori Makihara¹, Yuji Yamamoto², Wei-Chen Wen², Noriyuki Taoka¹, Akio Ohta¹, Seiichi Miyazaki¹ (1.Nagoya Univ., 2.IHP)

3:00 PM - 3:15 PM

[17p-B414-8] Faceting Diagram for Macrosteps at Equilibrium

〇Noriko Akutsu¹, Yasuhiro Akutsu² (1.Osaka Electro-Commu. Univ., 2.Osaka Univ.)

3:15 PM - 3:30 PM

▲ [17p-B414-9] First-Principles Simulation of Electronic Structure of Bulk and Surfaces SnS

〇(D)Rohit Sanjay Dahule¹, Kenta Hongo¹, Ryo Maezono¹ (1.JAIST)

3:30 PM - 3:45 PM

[17p-B414-10] Flattening of the band profile of Si(111) p-type space charge layer by the standing wave formation of valence electrons

〇Sakura-Nishino Takeda¹, Nur Idayu Ayob², Hiroshi Daimon¹, Takeshi Inagaki¹ (1.NAIST, 2.IIUM)

3:45 PM - 4:00 PM

[17p-B414-11] Thermoelectric properties of two-terminal pair circuit of single-wall carbon nanotube

〇Daisuke Hayashi¹, Sataoka Aoyagi¹ (1.Seikei university)

4:00 PM - 4:15 PM

[17p-B414-12] Circuit modeling of MOS capacitors with interface traps

〇Koichi Fukuda¹, Junichi Hattori¹, Hidehiro Asai¹, Toshihide Ide¹, Mitsuaki Shimizu¹ (1.AIST)

4:15 PM - 4:30 PM

[17p-B414-13] Carrier Mobility Modeling for MONOS SiN Layer Considering Electric Field and Temperature Dependence

〇Keitaro Naito¹, Hiroshi Takeda¹, Takayuki Okura¹, Junji Shimokawa¹, Muneyuki Tsuda¹, Hiroyuki Yamashita¹, Keiichi Sawa¹, Takashi Kurusu¹ (1.KIOXIA Corporation)

4:30 PM - 4:45 PM

[17p-B414-14] Acoustic Phonon Scattering in Free-standing Anisotropic Silicon Plates

〇Nobuya Mori¹ (1.Osaka Univ.)

4:45 PM - 5:00 PM

[17p-B414-15] Acceleration of Numerical Calculation of Electric Field Distribution in 3D Monte Carlo Device Simulation by Machine Learning

〇(M1C)Shunsuke Kuramoto¹, Mori Nobuya¹ (1.Osaka Univ.)

Session information

[17p-B414-1~15] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

△ [17p-B414-1] Deformation and contact path of PVA brush nodule in relative motion on a flat plate

△ [17p-B414-2] Measurements of liquid film thickness formed
on a two-fluid jet-sprayed surface

[17p-B414-3] Fabrication of flat Ge(111) surfaces treated with TMAH aqueous solution

[17p-B414-4] Analysis of dependence on substrate crystal plane orientation in Si etching process with the HF/HNO₃ mixture

△ [17p-B414-5] Graphene Oxide Assisted Etching of Si under Negative Bias Condition

▲ [17p-B414-6] The effect of post metallization annealing sequence on the Pt gate etching immunity of MFSFET with ferroelectric non-doped HfO₂

[17p-B414-7] Characterization of Electronic charged States of Si-QDs on Thermally Oxidized SOI Substrates as Evaluated by Using an AFM/Kelvin Probe Force Technique

[17p-B414-8] Faceting Diagram for Macrosteps at Equilibrium

▲ [17p-B414-9] First-Principles Simulation of Electronic Structure of Bulk and Surfaces SnS

[17p-B414-10] Flattening of the band profile of Si(111) p-type space charge layer by the standing wave formation of valence electrons

[17p-B414-11] Thermoelectric properties of two-terminal pair circuit of single-wall carbon nanotube

[17p-B414-12] Circuit modeling of MOS capacitors with interface traps

[17p-B414-13] Carrier Mobility Modeling for MONOS SiN Layer Considering Electric Field and Temperature Dependence

[17p-B414-14] Acoustic Phonon Scattering in Free-standing Anisotropic Silicon Plates

[17p-B414-15] Acceleration of Numerical Calculation of Electric Field Distribution in 3D Monte Carlo Device Simulation by Machine Learning

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Session information

[17p-B414-1~15] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

△ [17p-B414-1] Deformation and contact path of PVA brush nodule in relative motion on a flat plate

△ [17p-B414-2] Measurements of liquid film thickness formed on a two-fluid jet-sprayed surface

△ [17p-B414-5] Graphene Oxide Assisted Etching of Si under Negative Bias Condition

▲ [17p-B414-6] The effect of post metallization annealing sequence on the Pt gate etching immunity of MFSFET with ferroelectric non-doped HfO2

▲ [17p-B414-9] First-Principles Simulation of Electronic Structure of Bulk and Surfaces SnS

Authenticate

△ [17p-B414-2] Measurements of liquid film thickness formed
on a two-fluid jet-sprayed surface

▲ [17p-B414-6] The effect of post metallization annealing sequence on the Pt gate etching immunity of MFSFET with ferroelectric non-doped HfO₂