9:30 AM - 11:30 AM
[15a-PA01-11] First-Principles Study of Epitaxial Graphene Growth Mechanism on SiC —Relation between step and C atom adsorption—
Keywords:graphene, SiC, first-principles calculation
In this study, we focus on the SiC thermal decomposition method, which is a method for forming large-area high-quality graphene crystals, and theoretically investigate the growth mechanism of epitaxial graphene. In the method, Si evaporates from the surface and C remaining on the surface forms graphene. Therefore, how C aggregates on the surface determines the crystallinity of graphene. Since steps are deeply involved in the growth of graphene according to previous studies, in this study, in particular, we study the relationship between steps and the adsorption of C atoms using the first-principles calculations to clarify the initial growth process.