Control of conduction type by B implantation into polycrystalline BaSi<sub>2</sub> films prepared by sputtering

Takumi Sato; Kazuki Kido; Hayato Hasebe; Haruki Takenaka; Sho Aonuki; Masami Mesuda; Kaoru Toko; Takashi Suemasu

Presentation information

Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[15p-A403-1~16] 13.2 Exploratory Materials, Physical Properties, Devices

Wed. Mar 15, 2023 1:00 PM - 5:15 PM A403 (Building No. 6)

Haruhiko Udono(Ibaraki Univ.), Takashi Suemasu(Univ. of Tsukuba), Kenji Yamaguchi(QST)

1:30 PM - 1:45 PM

[15p-A403-3] Control of conduction type by B implantation into polycrystalline BaSi₂ films prepared by sputtering

〇Takumi Sato¹, Kazuki Kido¹, Hayato Hasebe¹, Haruki Takenaka¹, Sho Aonuki¹, Masami Mesuda², Kaoru Toko¹, Takashi Suemasu¹ (1.Tsukuba Univ., 2.Tosoh Corporation)

Keywords:semiconductor, solar cell

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Presentation information

[15p-A403-1~16] 13.2 Exploratory Materials, Physical Properties, Devices

[15p-A403-3] Control of conduction type by B implantation into polycrystalline BaSi2 films prepared by sputtering

[15p-A403-3] Control of conduction type by B implantation into polycrystalline BaSi₂ films prepared by sputtering