Oral presentation

[15p-A403-1~16] 13.2 Exploratory Materials, Physical Properties, Devices

Wed. Mar 15, 2023 1:00 PM - 5:15 PM A403 (Building No. 6)

Haruhiko Udono(Ibaraki Univ.), Takashi Suemasu(Univ. of Tsukuba), Kenji Yamaguchi(QST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[15p-A403-1] [The 53rd Young Scientist Presentation Award Speech] Hole concentration reduction in CuI by Zn substitution and its mechanism

〇Masatake Tsuji¹, Soshi Iimura^1,2,3, Junghwan Kim^1,3, Hideo Hosono^1,2 (1.MCES Tokyo Tech., 2.NIMS, 3.PRESTO)

1:15 PM - 1:30 PM

[15p-A403-2] Relationship between the grain boundary and the carrier lifetime in BaSi₂ films

〇Kosuke Hara¹, Keisuke Arimoto¹, Noritaka Usami² (1.Univ. of Yamanashi, 2.Nagoya Univ.)

1:30 PM - 1:45 PM

[15p-A403-3] Control of conduction type by B implantation into polycrystalline BaSi₂ films prepared by sputtering

〇Takumi Sato¹, Kazuki Kido¹, Hayato Hasebe¹, Haruki Takenaka¹, Sho Aonuki¹, Masami Mesuda², Kaoru Toko¹, Takashi Suemasu¹ (1.Tsukuba Univ., 2.Tosoh Corporation)

1:45 PM - 2:00 PM

[15p-A403-4] Effects of post-annealing in vacuum and oxygen on the properties of BaSi₂ films

〇Ai Iwai¹, Sho Aonuki¹, Shunsuke Narita¹, Kaori Takayanagi¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Tsukuba Univ.)

2:00 PM - 2:15 PM

[15p-A403-5] Formation and characterization of B-doped BaSi₂ films by reactive deposition epitaxy

〇Arata Nakamura¹, Sho Aonuki¹, Shunsuke Narita¹, Kaori Takayanagi¹, Ai Iwai¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Tsukuba Univ.)

2:15 PM - 2:30 PM

[15p-A403-6] Effect of P-doping on the thermoelectric properties of Mg₂Si crystals

〇Daisuke Miyago¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

2:30 PM - 2:45 PM

[15p-A403-7] Reactive Ion Etching Property of Mg₂Si Substrates by CF₄/Ar

〇Naoki Imaizumi¹, Rikuto Nakamura¹, Misa Yoshida², Daiju Tsuya², Haruhiko Udono¹ (1.Ibaraki Univ., 2.NIMS)

2:45 PM - 3:00 PM

[15p-A403-8] Design of p-NiO/n-BaSi₂ heterojunction solar cells and their fabrication on glass substrates

〇Haruki Takenaka¹, Hayato Hasebe¹, Kazuki Kido¹, Masami Mesuda², Kaoru Toko¹, Takashi Suemasu¹ (1.Tsukuba Univ., 2.Tosoh Corporation)

3:00 PM - 3:15 PM

△ [15p-A403-9] Modeling HTL/BaSi₂ solar cells by optical simulations

〇(DC)Sho Aonuki¹, Carlos Mario Ruiz Tobon², Rudi Santbergen², Kaoru Toko¹, Olindo Isabella², Takashi Suemasu¹ (1.Univ. Tsukuba, 2.TU Delft)

3:15 PM - 3:30 PM

▲ [15p-A403-10] Application of a-SiC Electron Transport Layer in BaSi₂ Solar cells

〇(D)Rui Du¹, Sho Aonuki¹, Hayato Hasebe¹, Kazuki Kido¹, Haruki Takenaka¹, Masami Mesuda², Kaoru Toko³, Takashi Suemasu³ (1.Univ. of Tsukuba, Graduate School of Science and Technology, 2.Tosoh Corp., Advanced Materials Research Laboratory, 3.Univ. of Tsukuba, Faculty of Pure and Applied Sciences)

3:30 PM - 3:45 PM

[15p-A403-11] Investigation of n⁺-AZO/p-BaSi₂ solar cells with Zn_1-xGe_xO_y interface layer

〇Kaori Takayanagi¹, Sho Aonuki¹, Shunsuke Narita¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Tsukuba Univ.)

4:00 PM - 4:15 PM

[15p-A403-12] Microstructure of Mg₂Si nanosheet bundles and Mg₂Si_1-xGe_x nanostructures synthesized using MgCl₂-Mg melt

Keigo Sasaki¹, Kaito Sekino¹, Tomoya Koga¹, Yosuke Shimura^1,2, 〇Hirokazu Tatsuoka¹ (1.Grad. Sch. Integr. Sci., Shizuoka Univ., 2.Res. Inst. Electron., Shizuoka Univ.)

4:15 PM - 4:30 PM

[15p-A403-13] Preferred orientation of CaSi₂ films fabricated by close-spaced evaporation

〇(BC)Ryota Takagaki¹, Keisuke Arimoto¹, Junji Yamanaka¹, Kosuke Hara¹ (1.Yamanashi Univ.)

4:30 PM - 4:45 PM

[15p-A403-14] Crystal structure of SrSi_2-x

〇Motoharu Imai¹, Hiroshi Fujihisa² (1.NIMS, 2.AIST)

4:45 PM - 5:00 PM

[15p-A403-15] Crystal structure analysis and thermoelectric characterization of a stannide Na₂CdSn₅

〇Takahiro Yamada¹, Yuki Asamiya^1,2, Hisanori Yamane¹ (1.IMRAM, Tohoku Univ., 2.Grad. Sch. Eng., Tohoku Univ.)

5:00 PM - 5:15 PM

[15p-A403-16] Structural and Optical Characterization of Type Ⅱ SiGe Alloyed Clathrate Films with various SiGe Atomic Ratio

〇Akihiro Shintani, Shiori Kurita¹, Fumitaka Ohashi¹, Himanshu Jha¹, Rahul Kumar², Tetsuji Kume¹ (1.Gifu Univ., 2.NIT Gifu college)

Poster presentation

[16a-PB05-1~5] 13.2 Exploratory Materials, Physical Properties, Devices

Thu. Mar 16, 2023 9:30 AM - 11:30 AM PB05 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[16a-PB05-1] Electronic Structures of V₁₀ in Si Crystal

Daiki Kamihara¹, Taito Shimizu¹, 〇Kazuyuki Uchida¹ (1.Kyoto Sangyo Univ.)

9:30 AM - 11:30 AM

[16a-PB05-2] Ion-exchange reaction of ternary wurtzite oxide semiconductors

〇ISSEI SUZUKI¹, Takahisa Omata¹ (1.Tohoku Univ.)

9:30 AM - 11:30 AM

[16a-PB05-3] Optimal annealing condition of Mn-substituted CrSi₂ for application to infrared absorption

〇(M2)Kaichi Tasaki¹, Kei Hayashi¹, Tomohisa Takamatsu¹, Jing-Feng Li^1,2, Yuzuru Miyazaki¹ (1.Tohoku Univ., 2.Tsinghua Univ.)

9:30 AM - 11:30 AM

[16a-PB05-4] Evaluation of Al diffusion depth in Mg₂Si substrate by 4-point probe method

〇Kaito Ojima¹, Rikuto Nakamura¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

9:30 AM - 11:30 AM

[16a-PB05-5] Fabrication of low-threshold Schottky barrier diodes using FeS2 natural crystals

〇Riku Ando¹, Narihiko Maeda¹ (1.Tokyo Univ. of Technology)

Sessions

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[15p-A403-1~16] 13.2 Exploratory Materials, Physical Properties, Devices

[15p-A403-1] [The 53rd Young Scientist Presentation Award Speech] Hole concentration reduction in CuI by Zn substitution and its mechanism

[15p-A403-2] Relationship between the grain boundary and the carrier lifetime in BaSi₂ films

[15p-A403-3] Control of conduction type by B implantation into polycrystalline BaSi₂ films prepared by sputtering

[15p-A403-4] Effects of post-annealing in vacuum and oxygen on the properties of BaSi₂ films

[15p-A403-5] Formation and characterization of B-doped BaSi₂ films by reactive deposition epitaxy

[15p-A403-6] Effect of P-doping on the thermoelectric properties of Mg₂Si crystals

[15p-A403-7] Reactive Ion Etching Property of Mg₂Si Substrates by CF₄/Ar

[15p-A403-8] Design of p-NiO/n-BaSi₂ heterojunction solar cells and their fabrication on glass substrates

△ [15p-A403-9] Modeling HTL/BaSi₂ solar cells by optical simulations

▲ [15p-A403-10] Application of a-SiC Electron Transport Layer in BaSi₂ Solar cells

[15p-A403-11] Investigation of n⁺-AZO/p-BaSi₂ solar cells with Zn_1-xGe_xO_y interface layer

[15p-A403-12] Microstructure of Mg₂Si nanosheet bundles and Mg₂Si_1-xGe_x nanostructures synthesized using MgCl₂-Mg melt

[15p-A403-13] Preferred orientation of CaSi₂ films fabricated by close-spaced evaporation

[15p-A403-14] Crystal structure of SrSi_2-x

[15p-A403-15] Crystal structure analysis and thermoelectric characterization of a stannide Na₂CdSn₅

[15p-A403-16] Structural and Optical Characterization of Type Ⅱ SiGe Alloyed Clathrate Films with various SiGe Atomic Ratio

[16a-PB05-1~5] 13.2 Exploratory Materials, Physical Properties, Devices

[16a-PB05-1] Electronic Structures of V₁₀ in Si Crystal

[16a-PB05-2] Ion-exchange reaction of ternary wurtzite oxide semiconductors

[16a-PB05-3] Optimal annealing condition of Mn-substituted CrSi₂ for application to infrared absorption

[16a-PB05-4] Evaluation of Al diffusion depth in Mg₂Si substrate by 4-point probe method

[16a-PB05-5] Fabrication of low-threshold Schottky barrier diodes using FeS2 natural crystals

Authenticate

Sessions

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[15p-A403-1~16] 13.2 Exploratory Materials, Physical Properties, Devices

△ [15p-A403-9] Modeling HTL/BaSi2 solar cells by optical simulations

▲ [15p-A403-10] Application of a-SiC Electron Transport Layer in BaSi2 Solar cells

[16a-PB05-1~5] 13.2 Exploratory Materials, Physical Properties, Devices

Authenticate

△ [15p-A403-9] Modeling HTL/BaSi₂ solar cells by optical simulations

▲ [15p-A403-10] Application of a-SiC Electron Transport Layer in BaSi₂ Solar cells