[15p-B410-1~15] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[15p-B410-4] Study of initial surface adsorption behavior for Si₂H₆ utilizing molecular simulation

〇Hajime Karasawa¹, Yuki Yoshimoto¹, Shogo Shimada¹, Tomoya Nagahashi¹, Ryota Hariike¹ (1.KOKUSAI ELECTRIC)

Keywords:semiconductor, Si process, Si thin films

In order to understand formation mechanism of high-quality silicon thin films, initial surface adsorption behavior for Si₂H₆ have studied. We used wafer mass metrology to quantify adsorption species on surface and utilizing molecular simulation to understand adsorption model with Si₂H₆ decomposed species. At a result, we have proposed Si₂H₆ initial growth model that include small island density increase step with self-Aline like. Detail of mechanism consideration are reported in this study.