[15p-B410-1~15] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[15p-B410-5] On the Threshold Voltage Control of MONOS-Type Poly-Si TFT

〇Tetsuya Goto¹, Tomoyuki Suwa¹, Shigetoshi Sugawa¹ (1.NICHe, Tohoku Univ.)

Keywords:Poly-Si, Charge trapping layer, TFT

Threshold voltage (Vth) variation is a critical issue for Poly-Si TFT. To solve this difficulty, we introduced MONOS structure with charge trap layer in the gate insulator in Poly-Si TFT to control Vth, as in nonvolatile memory technology. We fabricated MONOS-type TFT on quartz substrate as a preliminary study. It was confirmed that Vth could be controlled by injecting charge into charge trapping layer.