2:15 PM - 2:30 PM
[15p-B410-5] On the Threshold Voltage Control of MONOS-Type Poly-Si TFT
Keywords:Poly-Si, Charge trapping layer, TFT
Threshold voltage (Vth) variation is a critical issue for Poly-Si TFT. To solve this difficulty, we introduced MONOS structure with charge trap layer in the gate insulator in Poly-Si TFT to control Vth, as in nonvolatile memory technology. We fabricated MONOS-type TFT on quartz substrate as a preliminary study. It was confirmed that Vth could be controlled by injecting charge into charge trapping layer.