1:45 PM - 2:00 PM
[15p-B410-4] Study of initial surface adsorption behavior for Si2H6 utilizing molecular simulation
Keywords:semiconductor, Si process, Si thin films
In order to understand formation mechanism of high-quality silicon thin films, initial surface adsorption behavior for Si2H6 have studied. We used wafer mass metrology to quantify adsorption species on surface and utilizing molecular simulation to understand adsorption model with Si2H6 decomposed species. At a result, we have proposed Si2H6 initial growth model that include small island density increase step with self-Aline like. Detail of mechanism consideration are reported in this study.