[16a-A408-1~10] 6.2 Carbon-based thin films

[16a-A408-8] Demonstration of the extremely low temperature operation of diamond MOSFETs with c-si-o channels in cryogenic environments.

〇(B)Masaharu Takeuchi¹, Chiyuki Wakabayashi¹, Kosuke Ota¹, Kento Narita¹, Yasuhiro Takahashi¹, Taisuke Kageura¹, Yoshihiko Takano², Minoru Tachiki², Shuuichi Ooi², Shunichi Arisawa², Hiroshi Kawarada^1,3 (1.Waseda Univ., 2.NIMS, 3.Kagami Memorial Inst.)

Keywords:superconductor, FET, Diamond

Diamond is a superconducting material with a boron concentration of 1×10²² cm^-3 in the (111) plane and a superconducting transition temperature Tc of up to 10 K above the helium temperature, making it suitable for superconducting FET applications. Superconducting FETs consist of a superconducting electrode and a semiconducting channel, and the critical current can be controlled. Therefore, a MOSFET with Si terminated diamond (C-Si-O) as the channel and (111) superconducting boron-doped diamond as the source and drain electrodes was fabricated and its operation under cryogenic conditions was evaluated.