[17a-A205-1~9] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

△ [17a-A205-7] Improvement in Etch Resistance of Hydrogenated Amorphous Carbon Films Based on Contribution Analysis of Process Parameters

〇(M1)Yusuke Ando¹, Hiroki Kondo², Kenji Ishikawa², Takayoshi Tsutsumi², Makoto Sekine², Masaru Hori² (1.Nagoya Univ. Eng., 2.Nagoya Univ. cLPS)

Keywords:amorphous carbon, CVD, machine learning

In this research, a contribution analysis of process parameters to etch resistance was conducted to improve the etch resistance of amorphous carbon, which is used as a plasma etch mask.
Machine learning analysis suggested the existence of two different types of parameters: parameters which create entire trends, and ones which affect only the vicinity of the optimized conditions.