Oral presentation

[17a-A205-1~9] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Fri. Mar 17, 2023 9:00 AM - 11:30 AM A205 (Building No. 6)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[17a-A205-1] Effects of Nitrogen Pressure and Substrate Temperature on Mechanical Properties of Pulsed Laser Deposited SiCN Thin Films

〇(B)Tatsuki Takenaka¹, Yoshifumi Aoi¹, Masateru Nose² (1.Ryukoku Univ., 2.Toyama Univ.)

9:15 AM - 9:30 AM

[17a-A205-2] Preparation and Characterization of SiCN Thin Films by Electron Cyclotron Resonance (ECR) Plasma Sputtering

〇(B)Yuki Oba¹, Kimihide Ito¹, Masateru Nose², Yoshifumi Aoi¹ (1.Ryukoku Univ., 2.Toyama Univ.)

9:30 AM - 9:45 AM

[17a-A205-3] Plasma-Assisted Reactive Sputtering for Amorphous Gallium Oxide Thin Film Formation

〇Kosuke Takenaka¹, Hibiki Komatsu¹, Tomoki Fujimura¹, Susumu Toko¹, Keisuke Ide², Akinori Ebe³, Toshio Kamiya², Yuichi Setsuhara¹ (1.Osaka Univ., 2.MSL Tokyo Tech., 3.EMD Corp.)

9:45 AM - 10:00 AM

[17a-A205-4] HfO2/SiO2 Interface Control by Neutral Beam Enhanced Atomic Layer Deposition

〇Daisuke Ohori¹, Takuya Ozaki¹, Yiming Li², Kazuhiko Endo¹, Seiji Samukawa^2,1 (1.IFS, Tohoku Univ., 2.NYCU)

10:00 AM - 10:15 AM

[17a-A205-5] Carbon nitride synthesis on carbon nanowalls using melamine gas

〇Kouta Ishigure¹, Mineo Hiramatsu¹, Takeda Keigo¹ (1.Meijo university)

10:30 AM - 10:45 AM

△ [17a-A205-6] Impact of hydrogen dilution on DLC film formation
by intermediate-pressure narrow gap plasma CVD

〇Mizuki Ueno¹, Kazuki Ishizaki¹, Hiroaki Kakiuchi¹, Hiromasa Ohmi¹ (1.Osaka Univ.)

10:45 AM - 11:00 AM

△ [17a-A205-7] Improvement in Etch Resistance of Hydrogenated Amorphous Carbon Films Based on Contribution Analysis of Process Parameters

〇(M1)Yusuke Ando¹, Hiroki Kondo², Kenji Ishikawa², Takayoshi Tsutsumi², Makoto Sekine², Masaru Hori² (1.Nagoya Univ. Eng., 2.Nagoya Univ. cLPS)

11:00 AM - 11:15 AM

△ [17a-A205-8] Prediction of Boron Nitride Film Properties Deposited on Micro-Trench Structures Using Nano-Network Structure Analysis

〇Takashi Hamano^1,5, Takayuki Matsuda¹, Yuya Asamoto^1,5, Masao Noma², Shigehiko Hasegawa³, Michiru Yamashita⁴, Keiichiro Urabe¹, Koji Eriguchi¹ (1.Kyoto Univ., 2.Shinko Seiki. Co., LTD., 3.Osaka Univ., 4.Hyogo Pref. Inst. Technol., 5.JSPS Research Fellow)

11:15 AM - 11:30 AM

△ [17a-A205-9] Preparation of TiN Films by DC Vacuum Arc Deposition System with a coiled anode

〇jumpei kito¹, Yoshinori Saiki¹, Kento Homma¹, Seiya Watanabe¹, Takahiro Bando¹, Toru Harigai¹, Hirofumi Takikawa¹, Hiroki Gima², Hiroaki Sugita² (1.Toyohashi Univ. Technol., 2.OSG)

Oral presentation

[17p-A205-1~18] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Fri. Mar 17, 2023 1:00 PM - 5:45 PM A205 (Building No. 6)

Kazuhiro Karahashi(Osaka univ.), Sumiko Fujisaki(Hitachi, Ltd.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[17p-A205-1] Preparation of the gradient element with two-dimensional spatial distribution of elements using powder mixture targets

〇Hiroharu Kawasaki¹, Takahiko Satake^1,2, Shin-ichi Aoqui² (1.Nat,l Ins. Tech., Sasebo Col., 2.Sojo Univ.)

1:15 PM - 1:30 PM

[17p-A205-2] Color change of Plasma Indicator with inorganic colorant by N₂ plasma

〇Natsumi Hirayama¹, Ayaka Asami¹, Yu Yamakawa¹, Seisaku Oshiro¹, Kazuhiro Uneyama¹ (1.Sakura Color Products Corp.)

1:30 PM - 1:45 PM

[17p-A205-3] Impact of nitrogen and water vapor addition on silicon nanocone formation by micro-wave hydrogen plasma

〇Naoki Tamura¹, Toshimitsu Nomura¹, Hiroaki Kakiuchi¹, Hiromasa Ohmi¹ (1.Osaka Univ.)

1:45 PM - 2:00 PM

[17p-A205-4] Technology for long-term retention of surface modification properties by plasma.

〇Kohshi Taguchi¹, Motohiro Yamahara¹, Mina Tomikawa¹, Kazuyuki Noborio¹ (1.SAKIGAKE-Semiconductor Co., Ltd.)

2:00 PM - 2:15 PM

[17p-A205-5] Application of technology for long-term retention of plasma treatment
:hydrophobic treatment

〇Kohshi Taguchi¹, Tomikawa Mina¹, Yamahara Motohiro¹, Noborio Kazuyuki¹ (1.SAKIGAKE-Semiconductor Co., Ltd.)

2:15 PM - 2:30 PM

[17p-A205-6] Modification of hydroxyl group on surface with water vapor plasma by direct.

〇Kohshi Taguchi¹, Kashiwagi Daiki¹, Noborio Kazuyuki¹, Yamahara Motohiro¹, Tomikawa Mina¹, Yamamura Akihiro¹ (1.SAKIGAKE-Semiconductor Co., Ltd.)

2:30 PM - 2:45 PM

[17p-A205-7] The Method of Gas Free Reduction by Vacuum Plasma

〇Shinya Ueno¹, Motohiro Yamahara¹, Kazuyuki Noborio¹, Kohshi Taguchi¹ (1.Sakigake Semiconductor Co., Ltd.)

2:45 PM - 3:00 PM

[17p-A205-8] Generation and annihilation of plasma-induced defects at an interface between thermal SiO2 and Si

〇Shota Nunomura¹, Isao Sakata¹, Takayoshi Tsutsumi², Masaru Hori² (1.AIST, 2.Nagoya Univ.)

3:00 PM - 3:15 PM

△ [17p-A205-9] Characterization of Structure Deformation in Low-k Dielectric Films using Cyclic Load—unloading Nanoindentation Technique

〇Takahiro Goya¹, Keiichiro Urabe¹, Koji Eriguchi¹ (1.Kyoto Univ.)

3:30 PM - 3:45 PM

[17p-A205-10] SiN cycle etch using metastable Ar irradiation for modified layer desorption

〇Takashi Shiota¹, Makoto Satake¹, Taku Iwase¹, Yasushi Sonoda² (1.Hitachi R&D, 2.Hitachi High-Tech)

3:45 PM - 4:00 PM

[17p-A205-11] Atomic layer etching of AlGaN at high temperature using F₂-added Ar plasma

〇Shohei Nakamura^1,2, Atsushi Tanide^1,2, Soichi Nadahara^1,2, Kenji Ishikawa², Osamu Oda², Masaru Hori² (1.SCREEN Holdings, 2.Nagoya Univ.)

4:00 PM - 4:15 PM

△ [17p-A205-12] The Influence of Fluorocarbon Gas Molecular Structures and their Atomic Compositions in High Aspect SiO₂ Etching

〇Noboru Hiwasa¹, Junji Kataoka¹, Norikatsu Sasao¹, Shuichi Kuboi¹, Daiki Iino¹, Kazuaki Kurihara¹, Hiroyuki Fukumizu¹ (1.KIOXIA Corp.)

4:15 PM - 4:30 PM

△ [17p-A205-13] Influence of sheath collision on angular distribution of high energy particles incident on an RF electrode in a dual-frequency capacitively-coupled plasma

〇(B)Shunya Kawamura¹, Keita Ichikawa¹, Haruka Suzuki¹, Daiki Iino², Hiroyuki Fukumizu², Kazuaki Kurihara², Toyoda Hirotaka¹ (1.Nagoya Univ., 2.Kioxia Corp.)

4:30 PM - 4:45 PM

[17p-A205-14] Etching reactions of Si and SiO₂ by tungsten fluoride ion injections

〇(M1)Shunta Kawabata¹, Tomoko Ito¹, Song-Yun Kang², Dongkyu Lee², Kazuhiro Karahashi¹, Satoshi Hamaguchi¹ (1.Osaka Univ., 2.Samsung Electronics)

4:45 PM - 5:00 PM

[17p-A205-15] Ultra-fast Etching of Photoresist Induced by Rapidly Heating and Atomic Oxygen Radical Supply by Reactive Atmospheric-pressure Thermal Plasma Jet

〇(M2)Hibiki Kato¹, Hiroaki Hanafusa¹, Seiichirou Higashi¹ (1.Graduate School of Advanced Science and Engineering, Hiroshima Univ.)

5:00 PM - 5:15 PM

[17p-A205-16] Investigation of plasma dry etching of yttrium iron garnet using gas mixtures of argon and methane-hydrogen

〇(M1)Tatsuya Kitai¹, Siyuan Gao², Satoshi Iwamoto², Yasutomo Ota¹ (1.Keio Univ., 2.RCAST, the Univ. of Tokyo)

5:15 PM - 5:30 PM

[17p-A205-17] SiGe/Si Selective Etching using F, N and CF radicals via Ab-initio Calculations

〇RYOKO SUGANO¹, TAKU IWASE¹, KENICHI KUWAHARA² (1.Hitachi R&D Group, 2.Hitachi High-tech)

5:30 PM - 5:45 PM

[17p-A205-18] Electronic properties of C₂F₄ and production mechanism of PTFE

〇Toshio Hayashi¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹, Naoto Kodama¹, Hirotaka Toyada¹ (1.Nagoya Univ.)

Sessions

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[17a-A205-1~9] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[17a-A205-1] Effects of Nitrogen Pressure and Substrate Temperature on Mechanical Properties of Pulsed Laser Deposited SiCN Thin Films

[17a-A205-2] Preparation and Characterization of SiCN Thin Films by Electron Cyclotron Resonance (ECR) Plasma Sputtering

[17a-A205-3] Plasma-Assisted Reactive Sputtering for Amorphous Gallium Oxide Thin Film Formation

[17a-A205-4] HfO2/SiO2 Interface Control by Neutral Beam Enhanced Atomic Layer Deposition

[17a-A205-5] Carbon nitride synthesis on carbon nanowalls using melamine gas

△ [17a-A205-6] Impact of hydrogen dilution on DLC film formation
by intermediate-pressure narrow gap plasma CVD

△ [17a-A205-7] Improvement in Etch Resistance of Hydrogenated Amorphous Carbon Films Based on Contribution Analysis of Process Parameters

△ [17a-A205-8] Prediction of Boron Nitride Film Properties Deposited on Micro-Trench Structures Using Nano-Network Structure Analysis

△ [17a-A205-9] Preparation of TiN Films by DC Vacuum Arc Deposition System with a coiled anode

[17p-A205-1~18] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[17p-A205-1] Preparation of the gradient element with two-dimensional spatial distribution of elements using powder mixture targets

[17p-A205-2] Color change of Plasma Indicator with inorganic colorant by N₂ plasma

[17p-A205-3] Impact of nitrogen and water vapor addition on silicon nanocone formation by micro-wave hydrogen plasma

[17p-A205-4] Technology for long-term retention of surface modification properties by plasma.

[17p-A205-5] Application of technology for long-term retention of plasma treatment
:hydrophobic treatment

[17p-A205-6] Modification of hydroxyl group on surface with water vapor plasma by direct.

[17p-A205-7] The Method of Gas Free Reduction by Vacuum Plasma

[17p-A205-8] Generation and annihilation of plasma-induced defects at an interface between thermal SiO2 and Si

△ [17p-A205-9] Characterization of Structure Deformation in Low-k Dielectric Films using Cyclic Load—unloading Nanoindentation Technique

[17p-A205-10] SiN cycle etch using metastable Ar irradiation for modified layer desorption

[17p-A205-11] Atomic layer etching of AlGaN at high temperature using F₂-added Ar plasma

△ [17p-A205-12] The Influence of Fluorocarbon Gas Molecular Structures and their Atomic Compositions in High Aspect SiO₂ Etching

△ [17p-A205-13] Influence of sheath collision on angular distribution of high energy particles incident on an RF electrode in a dual-frequency capacitively-coupled plasma

[17p-A205-14] Etching reactions of Si and SiO₂ by tungsten fluoride ion injections

[17p-A205-15] Ultra-fast Etching of Photoresist Induced by Rapidly Heating and Atomic Oxygen Radical Supply by Reactive Atmospheric-pressure Thermal Plasma Jet

[17p-A205-16] Investigation of plasma dry etching of yttrium iron garnet using gas mixtures of argon and methane-hydrogen

[17p-A205-17] SiGe/Si Selective Etching using F, N and CF radicals via Ab-initio Calculations

[17p-A205-18] Electronic properties of C₂F₄ and production mechanism of PTFE

Authenticate

Sessions

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[17a-A205-1~9] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

△ [17a-A205-6] Impact of hydrogen dilution on DLC film formationby intermediate-pressure narrow gap plasma CVD

△ [17a-A205-7] Improvement in Etch Resistance of Hydrogenated Amorphous Carbon Films Based on Contribution Analysis of Process Parameters

△ [17a-A205-8] Prediction of Boron Nitride Film Properties Deposited on Micro-Trench Structures Using Nano-Network Structure Analysis

△ [17a-A205-9] Preparation of TiN Films by DC Vacuum Arc Deposition System with a coiled anode

[17p-A205-1~18] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

△ [17p-A205-9] Characterization of Structure Deformation in Low-k Dielectric Films using Cyclic Load—unloading Nanoindentation Technique

△ [17p-A205-12] The Influence of Fluorocarbon Gas Molecular Structures and their Atomic Compositions in High Aspect SiO2 Etching

△ [17p-A205-13] Influence of sheath collision on angular distribution of high energy particles incident on an RF electrode in a dual-frequency capacitively-coupled plasma

Authenticate

△ [17a-A205-6] Impact of hydrogen dilution on DLC film formation
by intermediate-pressure narrow gap plasma CVD

△ [17p-A205-12] The Influence of Fluorocarbon Gas Molecular Structures and their Atomic Compositions in High Aspect SiO₂ Etching