[17p-A205-1~18] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

△ [17p-A205-12] The Influence of Fluorocarbon Gas Molecular Structures and their Atomic Compositions in High Aspect SiO₂ Etching

〇Noboru Hiwasa¹, Junji Kataoka¹, Norikatsu Sasao¹, Shuichi Kuboi¹, Daiki Iino¹, Kazuaki Kurihara¹, Hiroyuki Fukumizu¹ (1.KIOXIA Corp.)

Keywords:dry etching, Fluorocarbon Gas, High Aspect Ratio

Radicals formed in fluorocarbon (FC) plasma, which is used for high aspect ratio (AR) processing of 3D memory, play an important role in controlling mask selectivity and hole shape because they adhere to the top of the mask and the side walls of the holes to form deposited films. In this study, we focused on the composition and structure of FC gas molecules and investigated their effects on the formation of deposited films and etching characteristics.