[18a-A301-1~13] 13.7 Compound and power devices, process technology and characterization

△ [18a-A301-9] N-polar GaN HEMT with high-resistivity C-doped GaN buffer layer

〇Yuki Yoshiya¹, Takuya Hoshi¹, Takuya Tsutsumi¹, Hiroki Sugiyama¹, Fumito Nakajima¹ (1.NTT Device Technology Labs)

Keywords:Galium nitride, N-polar, GaN HEMT