[1Bp01-04] Plasma Science and Technology (PST)

[1Bp04] Development of inward plasma

Chikatsu Iwase¹, *Ryo Kano¹, Naoyuki Sato², Tetsuo Shimizu^1,3, Hiroshi Tokumoto¹ (1. Sanyu Co., Ltd. , 2. Ibaraki University, 3. Advanced Industrial Science and Technology (AIST))

Inward plasma, while suctioning the etching gas from the sample surface side, irradiated with local plasma in the vicinity of the capillary inlet against the flow of the gas, it is a very unique plasma processing technique capable of performing etching, as a pretreatment in failure analysis, has been used to expose the wiring of the semiconductor device. Recently, the application to the semiconductor front-end processing device manufacturing is also expected. However, when adopted in the semiconductor device manufacturing process, since contamination and damage by the manufacturing process becomes a problem, it is necessary to grasp the damage of the individual process on the device, to suppress. In this study, the plasma density and ion energy of the inward plasma which could not be measured until now were measured by generating Ar plasma by the ion energy analyzer (IEA). It was found that the plasma density was about 4.2×10¹⁴ m^-3 and the lowest ion energy became about 20 eV.