[1Da01-09] Surface Science(SS1) Physical Property

[1Da03] Atomic and Electronic Structure of Indium Triple-Layer Structure on Si(111)

*Tomoka Murata¹, Kenta Kuroishi¹, Keisuke Yukawa¹, Shinichiro Hatta¹, Hiroshi Okuyama¹, Tetsuya Aruga¹ (1. Graduate School of Science, Kyoto University)

The atomic and electronic structure of In triple-layer structure grown on Si(111) was investigated by using LEED, STM and ARPES. By depositing In on the In/Si(111)-(√7×√3)-rect structure below 100 K, we obtained In triple-layer structure. We revealed an (11 × 11) superlattice of the triple-layer structure, while both LEED and STM emphasized a half periodicity of (11 × 11). This was attributed to the moiré interference between the Si(111)-(11 × 11) lattice (a_Si = 3.84 Å) and the In (13 × 13) hexagonal lattice (a_In = 3.25 Å). ARPES measurements showed that the triple-layer structure has two free-electron-like circular Fermi surfaces. We also observed replica Fermi surfaces, which are associated with the reciprocal lattice vectors of both the (1 × 1) Si(111) and the In hexagonal layers.