[1Fp01-09] Surface Science(SS2) Chemical Property

[1Fp02] Enhancement of protonation resistive switching property
of the SmNiO₃ film by virtue of atomically-ordered and flat substrate

*Azusa Hattori¹, Keito Umesaki¹, Ai I. Osaka^1,2, Hidekazu Tanaka¹ (1. SANKEN, Osaka University, 2. Graduated School of Engineering, University of Hyogo)

Proton-doped SmNiO₃ (SNO) thin film, where protons are dissociated from hydrogen molecules by utilizing Pt catalytic effect and then doped into the film (hydrogenation), can lead to an ~10⁸ of resistance modulation. Since protons in SNO tend to aggregate at the disordered crystal structures such as grain boundaries and defects , the SNO films without crystal inhomogeneity are required to improve the protonation resistive switching property. In this study, we attempted to improve protonation resistive switching property by virtue of on a atomically-ordered and flat LaAlO₃(LAO)(001) substrate.
The time profile of the resistance of SNO films on pristine-LAO and on STEP-LAO showed a steep resistance increasement at about t~200 sec for both LAO films while the difference in the saturated resistance switching ratio was observed. Because the resistance modulation is directly related to the amount of proton concentration within RNiO₃, the one-order higher resistance change in the SNO/STEP-LAO is thought to reflect the ordered and flat LAO substrate surface, which lead to an undistorted interface following the suppressed the crystal inhomogeneity of the SNO film.