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[1Ga02] Effect of gamma irradiation on titanium dioxide thin films as vacuum ultraviolet photoconductive detectors
We demonstrate the potential of TiO2 thin films as photoconductive detectors of VUV radiation. Excitation with a VUV lamp generated a photo current that is at least two orders of magnitude higher compared to the current generated in the dark. Further investigation of the effects of gamma-ray irradiation on the optical properties of TiO2 confirm the creation of VO and Ti3+ defects, which serve as trapping centers for photo-generated electrons. These traps reduce the effective charge carrier concentration. As a result, gamma-ray irradiation resulted to a decrease in the photo current. Investigation of the optical properties of the irradiated thin films over a period of 720 hours reveal the recovery of its transparency. The photoconductivity of the detector improved after recovery, with the photo current increasing. The photosensitivity also increased by a factor of about 16 post-recovery compared to its photosensitivity before irradiation.
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