[1P01-52] Poster Presentation

[1P27] The √7×√3 surface reconstruction consisting of a triple indium layer on the Si(111) surface

*Takayuki Suzuki¹, kazuma yagyu¹ (1. Fukuoka University)

The formation process of the ‘rect’ structure of the Si(111)-√7×√3-In surface (referred to as √7×√3-rect) is studied in detail by varying the post-heating temperature after indium deposition on the Si(111) substrate. We find that at a low post-heating temperature of about 400 ºC, two-dimensional indium islands of tens of nm in size are formed, consisting of a triple indium layer with a √7×√3 reconstruction different from the √7×√3-rect reconstruction (referred to as √7×√3-TL). Surface defects in the disordered region around the √7×√3-TL islands originate from the partially remaining 7×7 reconstruction at the interface between the Si substrate and the indium layers. Additional indium atoms evaporated on the √7×√3-rect surface with the √7×√3-TL islands form flat wide single indium layers incorporating the √7×√3-TL islands. However, the layers do not adopt the √7×√3-TL reconstruction, but the incommensurate ~5.4×~5.4 reconstruction.